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2N3632

Texas Instruments

2N3632 by Texas Instruments

2N3632 by Texas Instruments is an NPN RF Power BJT with a max power dissipation of 23W and max collector current of 3A. It operates in the very high frequency band at up to 175MHz, making it suitable for applications requiring high power amplification in RF circuits. The transistor's ceramic-metal-sealed co-fired package ensures reliable performance even at temperatures up to 200°C.

Median Price

$171.910

Lifecycle Status

Suppliers In-Stock

15

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1k+

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American Microsemiconductor Inc.

USA . 20 parts In-Stock

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Digiode

USA . 11,050 parts In-Stock

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Vyrian

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Anansix

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Amar Radio Corporation

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ECAB

Sweden . 51 parts In-Stock

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Manotoh

Italy . 36 parts In-Stock

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Prism Electronics

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Fibra_Brandt Electronic GMBH

Germany . 17 parts In-Stock

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MISTER SPROCKETS

USA . 10 parts In-Stock

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Nova Conductors

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Odi Ramu Company

Canada . 4 parts In-Stock

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Huijzer Components

Netherlands . 3 parts In-Stock

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EMSNET

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PUI

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ChromeModa Solutions

Germany . 3,414 parts In-Stock

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$0.369

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$0.303

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IDEA Electronic Components Group

UK . 2,520 parts In-Stock

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$1.382

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DigiPath Technology Company

USA . 3,165 parts In-Stock

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$2.887

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MKK Technologies

India . 1,530 parts In-Stock

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One Stop Electronics

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AZTECH Wire

Italy . 404 parts In-Stock

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Corphita

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UNI Independent Distributors

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Parana Technologies

USA . 4,236 parts In-Stock

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Glotronic Ltd.

UK . 2,900 parts In-Stock

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Supply Digital

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Aranea Global

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Perfect Parts

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Assy Fe

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RTC Component Inc.

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Overview

Unlock the power of connectivity with the Texas Instruments 2N3632 RF Power Bipolar Junction Transistor. This high-quality NPN transistor, known for its reliability and performance, is perfect for a wide range of applications in the very high frequency band. From amplifiers to oscillators, this single-configured transistor offers not only exceptional power dissipation but also a durable ceramic, metal-sealed cofired package. Trust Texas Instruments to provide you with the tools you need for seamless connectivity and unparalleled performance. Elevate your projects today with the 2N3632 transistor.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Ceramic and metal-sealed cofired package body material provides excellent thermal conductivity, ensuring efficient heat dissipation and reliability in operation.

Polarity or Channel Type: NPN

NPN configuration allows for easy interfacing with other NPN components, contributing to system compatibility and ease of design.

Maximum Power Dissipation (Abs): 23 W

High maximum power dissipation of 23W enables the transistor to handle high power levels, making it suitable for demanding RF power applications.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can withstand high-temperature environments, increasing its versatility in various applications.

Maximum Collector-Base Capacitance: 25 pF

Low collector-base capacitance of 25pF minimizes signal distortion and ensures high-frequency performance, making it ideal for very high-frequency band applications.

Maximum Collector-Emitter Voltage: 40 V

With a maximum collector-emitter voltage of 40V, this transistor offers a high breakdown voltage, enhancing its reliability in voltage fluctuation scenarios.

Nominal Transition Frequency (fT): 175 MHz

The high nominal transition frequency of 175MHz indicates excellent high-frequency performance, making it suitable for very high-frequency band applications where fast switching speeds are required.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2N3632 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

5

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-60

JESD-30 Code:

O-CUPM-P3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3632 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-858-4928, 5961008584928, 5961-99-118-2959, 5961991182959, 5961-14-291-6676, 5961142916676, 5961-17-804-2606, 5961178042606, 5961-99-715-2273, 5961997152273

NIIN

008584928, 991182959, 142916676, 178042606, 997152273

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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