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SD4013

STMicroelectronics

SD4013 by STMicroelectronics

SD4013 by STMicroelectronics is a NPN RF Power BJT with 6 terminals and max power dissipation of 70W. Operating in the ultra-high frequency band, it has a max collector-emitter voltage of 30V. Ideal for applications requiring high-power amplification in RF circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,327 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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4,327

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Vyrian

USA . 3,209 parts In-Stock

1+ parts

-

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1k+ parts

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3,209

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Anansix

USA . 1,675 parts In-Stock

1+ parts

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100+ parts

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1,675

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 604 parts In-Stock

1+ parts

$1.017

100+ parts

-

1k+ parts

$0.915

10k+ parts

-

604

$1.017

-

$0.915

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MKK Technologies

India . 2,171 parts In-Stock

1+ parts

$1.912

100+ parts

-

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-

10k+ parts

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2,171

$1.912

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DigiPath Technology Company

USA . 2,171 parts In-Stock

1+ parts

$1.912

100+ parts

-

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10k+ parts

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2,171

$1.912

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Corphita

USA . 3,736 parts In-Stock

1+ parts

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3,736

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Parana Technologies

USA . 226 parts In-Stock

1+ parts

-

100+ parts

$1.216

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10k+ parts

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226

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$1.216

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Overview

Discover the ultimate power and performance with the SD4013 RF Power Bipolar Junction Transistor by STMicroelectronics. This NPN transistor in a single configuration offers exceptional quality and reliability, ideal for ultra-high frequency applications. With a maximum power dissipation of 70 W and a maximum collector current of 3 A, this transistor provides unmatched value and benefits to customers looking for top-tier electronic components. Upgrade your projects with the SD4013 and experience the difference in performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the transistor.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, making it versatile for a variety of applications.

Configuration: SINGLE

Simplifies circuit design and installation, reducing complexity and potential points of failure.

Surface Mount: YES

Allows for easy and secure mounting onto circuit boards, saving space and simplifying assembly processes.

Package Shape: ROUND

Facilitates uniform heat dissipation and supports efficient operation in a compact form factor.

Terminal Form: FLAT

Ensures a secure and stable connection in circuit setups, reducing the risk of signal loss or interruptions.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Enables high-speed signal processing, making it suitable for advanced RF applications requiring fast response times.

No. of Terminals: 6

Provides flexibility for connecting to various circuit elements, supporting diverse circuit configurations.

Maximum Power Dissipation (Abs): 70 W

Can handle high power levels without overheating, ensuring stable performance under demanding conditions.

Package Style (Meter): FLANGE MOUNT

Facilitates easy integration into existing systems, reducing installation time and effort.

Minimum DC Current Gain (hFE): 10

Ensures consistent amplification of input signals, supporting reliable signal processing and transmission.

Maximum Operating Temperature: 200 °C

Capable of operating in high-temperature environments, increasing its versatility for various industrial applications.

Maximum Collector-Base Capacitance: 30 pF

Helps minimize signal distortion and interference, ensuring clean and accurate signal amplification.

Maximum Collector-Emitter Voltage: 30 V

Provides a wide operating voltage range, making it compatible with a variety of circuit setups and power sources.

Transistor Element Material: SILICON

Offers excellent performance and reliability, ensuring consistent operation over an extended lifecycle.

Maximum Collector Current (IC): 3 A

Capable of handling high current levels, making it suitable for power amplification and signal processing applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD4013 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

DIFFUSED EMITTER BALLAST RESISTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Base Capacitance:

30 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PXFM-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

UNSPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

SD4013 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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