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BLY89A

NXP Semiconductors

BLY89A by NXP Semiconductors

BLY89A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 5 A, operates up to 200 °C, and supports frequencies in the very high range. Its round plastic/epoxy package ensures reliable performance.

Median Price

$74.840

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 6 parts In-Stock

1+ parts

$74.840

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6

$74.840

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Digiode

USA . 3,464 parts In-Stock

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3,464

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Anansix

USA . 2,642 parts In-Stock

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2,642

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Vyrian

USA . 176 parts In-Stock

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176

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ComSIT Distribution GmbH

Germany . 2 parts In-Stock

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2

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GES GmbH

Germany . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,149 parts In-Stock

1+ parts

$5.050

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1,149

$5.050

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Native Components

USA . 719 parts In-Stock

1+ parts

$4,471.960

100+ parts

$4,382.521

1k+ parts

$4,337.801

10k+ parts

$4,293.082

719

$4,471.960

$4,382.521

$4,337.801

$4,293.082

Northwest PG Solutions

USA . 1,552 parts In-Stock

1+ parts

$4,919.156

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1,552

$4,919.156

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UNI Independent Distributors

Spain . 6,845 parts In-Stock

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6,845

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Corphita

USA . 4,012 parts In-Stock

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4,012

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Assy Fe

Spain . 3 parts In-Stock

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Overview

Experience unmatched reliability and performance with the BLY89A by NXP Semiconductors, a trusted leader in innovative solutions. This high-quality RF Power BJT is designed for superior amplification, making it perfect for various applications in telecommunications and broadcast systems. With its robust construction and exceptional temperature tolerance, the BLY89A ensures consistent operation while delivering increased power efficiency, empowering your projects to excel.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and longevity under various operating conditions.

Polarity or Channel Type: NPN

NPN configuration is optimal for high-speed applications and allows for efficient switching capabilities.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, making it easier to work with.

Transistor Application: AMPLIFIER

Designed for amplification, this BJT is ideal for applications requiring signal boosting and processing.

Minimum Power Gain (Gp): 6 dB

Achieving a minimum power gain of 6 dB is advantageous for effective amplification in various RF applications.

Package Shape: ROUND

The round package shape can offer benefits in terms of heat dissipation and space efficiency in circuit layout.

Terminal Form: FLAT

Flat terminals enhance ease of connections on PCB layouts, ensuring stable placements and reliable performance.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operating in the very high frequency band makes it suitable for advanced communication systems and RF circuits.

No. of Terminals: 4

Having four terminals allows for versatile circuit design, facilitating various connection configurations.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount style provides secure mounting options, enhancing mechanical stability in applications.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature of 200 °C enhances reliability in demanding environments and heat-generating applications.

Maximum Collector-Emitter Voltage: 18 V

This voltage rating makes it suitable for applications typically operating below 18V, ensuring safe performance margins.

Transistor Element Material: SILICON

Silicon offers excellent electronic properties, ensuring high performance and efficiency in transistor applications.

Maximum Collector Current (IC): 5 A

The high maximum collector current allows this BJT to drive significant loads, making it effective in power amplification.

Terminal Position: RADIAL

Radial terminal position facilitates space-saving designs and straightforward mounting options on PCBs.

Case Connection: ISOLATED

An isolated case connection minimizes interference and enhances the safety of both device and circuit operation.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLY89A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

6 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLY89A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-15-059-0428, 5961150590428

NIIN

150590428

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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