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BLY88A

NXP Semiconductors

BLY88A by NXP Semiconductors

BLY88A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 2.5 A, operates up to 200 °C, and offers a min power gain of 7.5 dB in the very high frequency band. Its round, flat package ensures efficient performance in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Digiode

USA . 3,006 parts In-Stock

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Anansix

USA . 1,098 parts In-Stock

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Vyrian

USA . 380 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 1 parts In-Stock

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One Stop Electronics

USA . 684 parts In-Stock

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$49.050

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UNI Independent Distributors

Spain . 3,430 parts In-Stock

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Corphita

USA . 3,405 parts In-Stock

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Northwest PG Solutions

USA . 2,090 parts In-Stock

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Native Components

USA . 688 parts In-Stock

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Overview

Elevate your RF applications with the BLY88A from NXP Semiconductors, a leader in innovative semiconductor technology. This high-performance bipolar junction transistor excels in delivering superior power amplification, ensuring top-notch signal clarity and reliability even at very high frequencies. With its robust design and exceptional thermal resilience, the BLY88A empowers engineers to achieve remarkable results in communication systems and beyond, making it the ideal choice for quality and performance-driven projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and resistance to environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplifier applications due to their efficiency in switching and amplification, making this transistor versatile.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces the complexity of implementation in amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor provides optimal performance for audio and RF applications.

Minimum Power Gain (Gp): 7.5 dB

A minimum power gain of 7.5 dB ensures adequate amplification, enabling effective performance in audio and RF circuits.

Package Shape: ROUND

The round package shape allows for efficient space utilization and easy mounting in various circuit board layouts.

Terminal Form: FLAT

Flat terminal form facilitates easier soldering and improves connectivity within the circuit, ensuring stable operation.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Designed to operate in the very high frequency band, this transistor is ideal for RF applications, ensuring robust performance at high frequencies.

No. of Terminals: 4

Having four terminals allows for versatile connection options and enhances circuit integration capabilities.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount package style provides reliable mechanical support and is ideal for high-power applications.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature of 200 °C allows for reliable performance even in demanding environments, enhancing the longevity of the device.

Maximum Collector-Emitter Voltage: 18 V

A maximum collector-emitter voltage of 18V makes this transistor suitable for a variety of amplifier circuits without risk of damage.

Transistor Element Material: SILICON

Silicon as the element material provides good thermal stability and conductivity, making it suitable for high-performance applications.

Maximum Collector Current (IC): 2.5 A

With a maximum collector current of 2.5 A, this transistor can handle significant power levels, making it suitable for high-current applications.

Terminal Position: RADIAL

Radial terminal position enhances mounting flexibility in various circuit layouts, allowing for optimal space utilization.

Case Connection: ISOLATED

An isolated case connection ensures improved safety and reduces the risk of short circuits, enhancing overall reliability.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLY88A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

7.5 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLY88A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-25-121-3814, 5961251213814

NIIN

251213814

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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