Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BLY88A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 2.5 A, operates up to 200 °C, and offers a min power gain of 7.5 dB in the very high frequency band. Its round, flat package ensures efficient performance in various electronic devices.
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Digiode
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One Stop Electronics
$49.050
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Corphita
Northwest PG Solutions
Native Components
The plastic/epoxy material ensures durability and resistance to environmental factors, making the transistor suitable for various applications.
NPN transistors are widely used in amplifier applications due to their efficiency in switching and amplification, making this transistor versatile.
A single configuration simplifies circuit design and reduces the complexity of implementation in amplifier circuits.
Designed specifically for amplification, this transistor provides optimal performance for audio and RF applications.
A minimum power gain of 7.5 dB ensures adequate amplification, enabling effective performance in audio and RF circuits.
The round package shape allows for efficient space utilization and easy mounting in various circuit board layouts.
Flat terminal form facilitates easier soldering and improves connectivity within the circuit, ensuring stable operation.
Designed to operate in the very high frequency band, this transistor is ideal for RF applications, ensuring robust performance at high frequencies.
Having four terminals allows for versatile connection options and enhances circuit integration capabilities.
The post/stud mount package style provides reliable mechanical support and is ideal for high-power applications.
A high maximum operating temperature of 200 °C allows for reliable performance even in demanding environments, enhancing the longevity of the device.
A maximum collector-emitter voltage of 18V makes this transistor suitable for a variety of amplifier circuits without risk of damage.
Silicon as the element material provides good thermal stability and conductivity, making it suitable for high-performance applications.
With a maximum collector current of 2.5 A, this transistor can handle significant power levels, making it suitable for high-current applications.
Radial terminal position enhances mounting flexibility in various circuit layouts, allowing for optimal space utilization.
An isolated case connection ensures improved safety and reduces the risk of short circuits, enhancing overall reliability.
RF Power Bipolar Junction Transistors (BJT) BLY88A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
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BLY88A Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-25-121-3814, 5961251213814
NIIN
251213814
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
SS14
Rfe International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MMBT2222ALT1G
Onsemi
MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.
SMBJ18CA
Rectron
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99WT1G
Fairchild Semiconductor
BSS123NH6327XTSA1
Infineon Technologies
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
MBR1560CT
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Maximum Repetitive Peak Reverse Voltage: 60 V; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 150 A;
261
Micronetics
Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;
ULN2803A
Motorola
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;
1N4148
Taiwan Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;
Taitron Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Lite-on Semiconductor
MBR0520LT1
MBR0520LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring low power consumption in compact electronic devices. This single-configured diode is surface mountable and has a max repetitive peak reverse voltage of 20V, ideal for small outline package designs.
LL4148-GS08
Vishay Intertechnology
The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.
LM2931AZ-5.0RAG
LM2931AZ-5.0RAG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage, 0.1A max output current, and 0.6V max dropout voltage. Ideal for applications requiring stable voltage regulation in temperature-sensitive environments up to 150°C.
Sensitron Semiconductor
1N4148WS
Weitron Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRG0805F10K
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10000 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
BLV38
NXP Semiconductors
BLV38 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 290 W, operates at very high frequencies, and offers a min power gain of 8 dB. Ideal for demanding RF environments, it ensures reliable performance.
LAE4002S
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .09 A; Additional Features: HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR; JESD-30 Code: S-CQMW-F4;
AM1517-025
STMicroelectronics
STMicroelectronics' AM1517-025 is an NPN BJT transistor with 8.5 dB min power gain, ideal for amplifier applications in L Band frequencies. It has a max power dissipation of 45 W and can handle up to 2.5 A collector current, making it suitable for high-power RF amplification needs. The package is ceramic-metal sealed co-fired with a square shape and flange mount style for efficient heat dissipation.
SD1730(TH560)
SD1730(TH560) by STMicroelectronics is an NPN RF power BJT designed for high-frequency applications. It features a max power dissipation of 320 W, operates up to 200 °C, and supports collector currents of 16 A. Ideal for demanding RF amplification tasks in compact designs.
LLE15180XTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 15; Minimum Power Gain (Gp): 7.8 dB;
MX0912B251Y,114
NPN; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; JESD-30 Code: R-CDFM-F2; Package Style (Meter): FLANGE MOUNT;
SD1534-01
STMicroelectronics' SD1534-01 is an NPN RF BJT transistor with 5.5A IC, 219W Pd, and L Band frequency range. Ideal for amplifier applications, it comes in a plastic/epoxy package with flat terminals and operates up to 200 °C.
AM80912-030
STMicroelectronics AM80912-030 is an NPN BJT transistor with 7.8 dB min power gain, ideal for L Band applications. It has a max power dissipation of 75 W and can handle up to 3.5 A collector current. Suitable for switching purposes in high-frequency circuits due to its ceramic-metal package and flat terminal form.
BLX39
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 570 MHz; Maximum Collector Current (IC): 4 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
BDP950H6327XTSA1
Infineon's BDP950H6327XTSA1 is a PNP RF Power BJT with 60V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mount assembly.
SD1390
SD1390 by STMicroelectronics is an NPN RF BJT transistor with 4 terminals, suitable for ultra high frequency band applications. It has a max power dissipation of 8.33W and operates at temperatures up to 200 °C. With a transition frequency of 470MHz, it is ideal for amplifier circuits in various electronic devices.
SD1565
SD1565 by STMicroelectronics is an NPN RF BJT transistor with 2 elements, ideal for ultra-high frequency band applications. It has a max power dissipation of 1100W and can handle a collector current of 43.2A. The package is ceramic-metal-sealed co-fired, suitable for flange mount installations at temperatures up to 175 °C.
BLY91A
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .75 A; Maximum Collector-Emitter Voltage: 36 V; Transistor Element Material: SILICON;
AM81214-015
STMicroelectronics AM81214-015 is an NPN BJT transistor with 8.6 dB min power gain, ideal for L Band applications. It has a max power dissipation of 37.5W and operates at temperatures up to 250 °C, suitable for switching purposes in RF circuits. The package style is flange mount with a dual terminal position for easy installation.
SD1414-12
SD1414-12 by STMicroelectronics is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 150W, operates at up to 200 °C, and supports ultra-high frequency bands. Its flat terminal design allows for easy surface mounting.
LWE2010S
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .25 A; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MAX2602ESA
Maxim Integrated
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Terminal Position: DUAL; Minimum DC Current Gain (hFE): 100;
2N3375
2N3375 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 11.6 W, operates up to 200 °C, and supports frequencies up to 500 MHz. Ideal for ultra-high frequency circuits in metal packages.
5962F0721803V9A
Renesas Electronics
RF Power Bipolar Transistors; JESD-609 Code: e4; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Gold (Au); Peak Reflow Temperature (C): 260; Qualification: Qualified;
BLV948
BLV948 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 320W, operates in the UHF band, and offers a min power gain of 6.5 dB. Its robust ceramic-metal package ensures reliability in demanding environments.
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BLY87A
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.25 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Maximum Collector-Emitter Voltage: 18 V;
BLY87C
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 950 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 1.5 A;
BLY87C/01
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 700 MHz; Maximum Collector Current (IC): 1.25 A; Maximum Collector-Base Capacitance: 20 pF;
BLY88C
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON;
BLY88C/01
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 700 MHz; Maximum Collector Current (IC): 2.5 A; No. of Terminals: 4;
BLY89A
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Terminal Position: RADIAL; Qualification: Not Qualified;
BLY89C
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 750 MHz; Maximum Collector Current (IC): 6 A; Package Shape: ROUND;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 73 W; Maximum Collector Current (IC): 6 A; Terminal Position: RADIAL;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): 2 A; Terminal Form: FLAT;
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