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AM0912-300

STMicroelectronics

AM0912-300 by STMicroelectronics

AM0912-300 by STMicroelectronics is a NPN RF Power BJT with 7 dB min power gain, ideal for switching applications in L Band. It has a max power dissipation of 940 W and can handle up to 24 A collector current. The transistor is surface mountable and operates at temperatures up to 250 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 4,930 parts In-Stock

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4,930

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Anansix

USA . 1,677 parts In-Stock

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1,677

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Vyrian

USA . 785 parts In-Stock

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785

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,354 parts In-Stock

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$1.769

100+ parts

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$1.592

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2,354

$1.769

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$1.592

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MKK Technologies

India . 1,279 parts In-Stock

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$3.327

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1,279

$3.327

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DigiPath Technology Company

USA . 1,279 parts In-Stock

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$3.327

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1,279

$3.327

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Native Components

USA . 58 parts In-Stock

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$5.356

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58

$5.356

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Corphita

USA . 3,812 parts In-Stock

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3,812

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Northwest PG Solutions

USA . 1,945 parts In-Stock

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$5.249

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1,945

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Parana Technologies

USA . 95 parts In-Stock

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$2.115

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95

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$2.115

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Overview

Experience the power of cutting-edge technology with STMicroelectronics' AM0912-300 RF Power Bipolar Junction Transistor. This high-quality NPN transistor in a ceramic, metal-sealed package offers exceptional performance and reliability for switching applications in the L band frequency range. With a minimum power gain of 7 dB and a maximum power dissipation of 940 W, this transistor provides unmatched value and efficiency. Trust STMicroelectronics to deliver innovative solutions that meet your needs with precision and excellence.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package body material provides excellent thermal conductivity and high reliability, making the transistor durable and suitable for high-power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, offering high efficiency and low noise operation.

Configuration: SINGLE

The single configuration allows for easy integration into circuits and simplifies design considerations.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and high efficiency.

Surface Mount: YES

The surface mount capability makes installation and assembly easier, especially for small electronic devices.

Minimum Power Gain (Gp): 7 dB

With a minimum power gain of 7 dB, this transistor provides good amplification capabilities.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on circuit boards.

Terminal Form: FLAT

Flat terminals provide a stable and secure connection in the circuit.

Highest Frequency Band: L BAND

Designed for high-frequency operation in the L band, ideal for applications requiring fast signal processing.

No. of Terminals: 2

With only 2 terminals, the transistor is easy to integrate into circuits and requires minimal board space.

Maximum Power Dissipation (Abs): 940 W

With a high maximum power dissipation of 940 W, this transistor can handle high power levels without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides secure fastening and heat dissipation for the transistor.

Minimum DC Current Gain (hFE): 10

With a minimum DC current gain of 10, this transistor ensures consistent and reliable performance in amplification circuits.

Maximum Operating Temperature: 250 °C

With a high maximum operating temperature of 250 °C, this transistor can withstand elevated temperatures in demanding applications.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and efficiency in electronic components.

Maximum Collector Current (IC): 24 A

With a high maximum collector current of 24 A, this transistor can handle high current loads in switching applications.

Terminal Position: DUAL

Dual terminal position allows for flexible circuit connections and easier integration into various circuit layouts.

Case Connection: BASE

The base case connection provides a stable mounting point for the transistor in the circuit.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM0912-300 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

250 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

7 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AM0912-300 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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