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MSC82003

STMicroelectronics

MSC82003 by STMicroelectronics

STMicroelectronics' MSC82003 is a NPN RF BJT with 2 terminals and 21.8W power dissipation. Ideal for L Band applications, it has a max operating temp of 200 °C and hFE of 15, making it suitable for amplifier circuits in various industries.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,720 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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3,720

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-

-

-

Anansix

USA . 1,923 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,923

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-

-

-

Vyrian

USA . 1,245 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

-

1,245

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,661 parts In-Stock

1+ parts

$1.003

100+ parts

-

1k+ parts

$0.903

10k+ parts

-

1,661

$1.003

-

$0.903

-

MKK Technologies

India . 620 parts In-Stock

1+ parts

$1.886

100+ parts

-

1k+ parts

-

10k+ parts

-

620

$1.886

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-

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DigiPath Technology Company

USA . 620 parts In-Stock

1+ parts

$1.886

100+ parts

-

1k+ parts

-

10k+ parts

-

620

$1.886

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-

-

Corphita

USA . 150 parts In-Stock

1+ parts

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150

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Parana Technologies

USA . 48 parts In-Stock

1+ parts

-

100+ parts

$1.199

1k+ parts

-

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48

-

$1.199

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-

Overview

Unlock the power of next-generation RF applications with the MSC82003 by STMicroelectronics. Crafted from high-quality materials and boasting a single NPN configuration, this amplifier transistor offers unparalleled performance in the L Band frequency range. With a maximum power dissipation of 21.8W and a minimum DC current gain of 15, the MSC82003 is designed to deliver exceptional reliability and efficiency. Whether you're working on communications, radar systems, or aerospace applications, this product provides the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package provides excellent thermal performance, ensuring the transistor can handle high power dissipation without overheating.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier applications, making this product suitable for amplifier circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and allows for easier integration into amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into electronic assemblies.

Terminal Form: FLAT

Flat terminals facilitate easy soldering and connection to other components in the circuit.

Maximum Power Dissipation (Abs): 21.8 W

High power dissipation capability allows for reliable operation at high power levels without overheating.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this transistor can withstand high temperature environments.

Maximum Collector-Base Capacitance: 6.5 pF

Low collector-base capacitance minimizes the risk of parasitic oscillations and ensures stable amplifier performance.

Maximum Collector Current (IC): 0.6 A

The maximum collector current rating of 0.6A allows for high current handling capability in amplifier circuits.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MSC82003 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

6.5 pF

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

O-CRFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSC82003 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-032-2062, 5961010322062, 5961-12-345-7982, 5961123457982

NIIN

010322062, 123457982

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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