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MSC81020

STMicroelectronics

MSC81020 by STMicroelectronics

STMicroelectronics' MSC81020 is a NPN BJT transistor with 35W power dissipation, ideal for amplifier applications in L Band frequency. Featuring 15 min hFE gain, 1.5A max collector current, and 19pF max capacitance, it operates up to 200 °C with a ceramic-metal package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,623 parts In-Stock

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4,623

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Vyrian

USA . 374 parts In-Stock

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374

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Anansix

USA . 341 parts In-Stock

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341

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,241 parts In-Stock

1+ parts

$0.512

100+ parts

-

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$0.460

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1,241

$0.512

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$0.460

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MKK Technologies

India . 1,367 parts In-Stock

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$0.962

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1,367

$0.962

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DigiPath Technology Company

USA . 1,367 parts In-Stock

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$0.962

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1,367

$0.962

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Parana Technologies

USA . 929 parts In-Stock

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$0.612

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929

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$0.612

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Corphita

USA . 797 parts In-Stock

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797

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Overview

Unlock the power of RF amplification with the STMicroelectronics MSC81020. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality RF Power BJT transistors that offer unmatched performance and reliability. Ideal for applications in the L Band frequency range, this NPN transistor boasts a single configuration and a maximum power dissipation of 35W. With a minimum DC current gain of 15 and a maximum collector current of 1.5A, the MSC81020 provides customers with a high-value solution for their amplifier needs. Upgrade your RF systems with confidence using this advanced and versatile transistor from STMicroelectronics.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired body material ensures high durability and protection for the transistor, making it suitable for rugged environments.

Polarity or Channel Type: NPN

The NPN polarity allows for easier integration into existing circuit designs and provides reliable performance in amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use in amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification.

Package Shape: ROUND

The round package shape allows for easy mounting and facilitates heat dissipation, enhancing the overall reliability of the transistor.

Maximum Power Dissipation (Abs): 35 W

The high maximum power dissipation of 35W makes this transistor suitable for high-power applications and ensures reliable operation under heavy load conditions.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount package style offers easy installation and secure mounting, making it ideal for various amplifier applications.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain of 15 ensures stable and consistent amplification performance in the transistor.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this transistor can withstand high temperature environments and ensures reliable operation.

Maximum Collector-Base Capacitance: 19 pF

The low maximum collector-base capacitance of 19pF minimizes signal distortion and ensures accurate amplification in high-frequency applications.

Transistor Element Material: SILICON

The silicon transistor element material offers high performance and reliability, making it suitable for demanding amplifier applications.

Maximum Collector Current (IC): 1.5 A

The maximum collector current of 1.5A allows for high current amplification and ensures reliable operation under varying load conditions.

Terminal Position: RADIAL

The radial terminal position simplifies circuit layout and connection, making it easy to integrate into amplifier circuits.

Case Connection: BASE

The base case connection ensures easy and secure mounting of the transistor, enhancing its overall reliability and performance.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MSC81020 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

19 pF

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

O-CRPM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSC81020 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-15-122-7671, 5961151227671

NIIN

151227671

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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