Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Featured manufacturers
STMicroelectronics' MSC81005 is a NPN RF BJT with 18.8W power dissipation, ideal for L Band applications. Featuring 15 min hFE and 0.6A IC, it has a max operating temp of 200 °C. The package style is post/stud mount with a ceramic/metal-sealed co-fired body.
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$2.123
This material provides high durability and excellent thermal conductivity, ensuring the transistor can withstand high power dissipation and temperature levels.
NPN transistors are commonly used in amplification circuits and offer good overall performance.
Single configuration transistors are simple to use and can be easily integrated into circuits.
With a high power dissipation capacity, this transistor can handle demanding applications without overheating.
The high collector current rating allows for efficient power handling and performance.
The ability to operate at high temperatures makes this transistor suitable for a wide range of applications.
RF Power Bipolar Junction Transistors (BJT) MSC81005 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
MSC81005 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
EU2B-YS303C
Idec
ROTARY SWITCH;
BSS138
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;
M39029/58-360
Defense Logistics Agency
CONNECTOR ACCESSORY; Contact Type: CRIMP REAR RELEASE; Mating Contacts: M39029/56-348, M39029/57-354; Insertion Tool Sources: MILITARY; Contact Gender: MALE; Alternate Contact Sources: MILITARY;
2N7002
Diotec Semiconductor Ag
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;
1N4148
Onsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Compensated Devices
RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;
SMBJ18CA
International Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
Shenzhen Socay Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBRS130LT3G
Rochester Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138BKW,115
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;
BAV99
Kec
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
CC0603KRX7R9BB103
Yageo
Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
LM555CM
Harris Semiconductor
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
SS14
Vishay Intertechnology
Vishay Intertechnology's SS14 is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 1A. Operating at up to 125°C, it has a repetitive peak reverse voltage of 40V. Ideal for surface mount applications, it suits various electronic circuits requiring efficient rectification and low forward voltage drop.
Sprague Electric
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;
2N2222A
Forward International Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
MBRS140T3G
MBRS140T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.6V and max output current of 1A. It operates b/w -65°C to 125°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package style. The diode's matte tin terminal finish and dual position terminals enhance its performance in surface mount configurations.
LM358N
Texas Instruments
LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.
4554
Jw Miller Magnetics
Other Semiconductors;
Plessey Semiconductors Discrete Components Div
Other Transistors;
MRF422
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 40 V; Package Style (Meter): FLANGE MOUNT;
BDP950H6327TR
Infineon Technologies
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON;
BLU30/28
NXP Semiconductors
BLU30/28 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 8 dB, operates at ultra-high frequencies, and supports up to 4 A collector current. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
PH1214-110M
Tyco Electronics M/a-com
NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Qualification: Not Qualified; Highest Frequency Band: L BAND;
BLV20
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .9 A;
BFQ108
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .3 A; Transistor Application: AMPLIFIER;
BLV13
BLV13 by NXP Semiconductors is an NPN RF power BJT designed for amplifiers, featuring a min power gain of 8.5 dB and a nominal transition frequency of 1650 MHz. It operates at max temperatures of 200 °C with a collector current up to 8 A. Its robust ceramic-metal sealed package ensures reliability in very high-frequency applications.
LLE18040XL
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-CDFM-F2; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;
2N3866
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .4 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
ISL73128RHX/SAMPLE
Renesas Electronics
RF Power Bipolar Transistors;
MSC81035MP
STMicroelectronics
STMicroelectronics' MSC81035MP is a NPN RF BJT transistor with 150W power dissipation, suitable for L Band applications. It has a max collector current of 3A and operates at up to 200 °C. The package is round-shaped with flat terminals, making it ideal for switching purposes in surface mount configurations.
BFG591TRL13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;
BLV101B
BLV101B by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 7.5 dB, operates at ultra-high frequencies, and supports a max collector current of 10 A. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
934054887114
NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; No. of Terminals: 2;
SD1530-01
SD1530-01 by STMicroelectronics is an NPN RF BJT transistor for switching applications. With a max power dissipation of 87.5W, it operates in L Band frequencies and handles a max collector current of 2.6A. This single configuration transistor comes in a round plastic package suitable for surface mount applications at temperatures up to 200 °C.
933448540112
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3400 MHz; Maximum Collector Current (IC): 1.25 A; Package Shape: ROUND;
BDP950E6327HTSA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Package Style (Meter): SMALL OUTLINE;
MRF9100LSR3
RF Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
NE69039FB
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .3 A; No. of Terminals: 4; Maximum Collector-Emitter Voltage: 6 V;
BDP948H6327TR
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: PLASTIC/EPOXY;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
MSC82307
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 21.4 W; Maximum Collector Current (IC): 1.2 A; Terminal Form: FLAT;
MSC81350M
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 720 W; Maximum Collector Current (IC): 19.8 A; Case Connection: BASE;
MSC81035M
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 3 A; Highest Frequency Band: L BAND;
MSC82304
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11.5 W; Maximum Collector Current (IC): .6 A; Qualification: Not Qualified;
MSC81450M
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 910 W; Maximum Collector Current (IC): 28 A; Package Shape: RECTANGULAR;
MSC81250M
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 17.8 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MSC83303
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): .54 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MSC81400M
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1000 W; Maximum Collector Current (IC): 28 A; Case Connection: BASE;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 3 A; Terminal Position: RADIAL;
MSC82010
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 15;
MSC82003
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 21.8 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
MSC81111
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 18.8 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
MSC82306
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 16.7 W; Maximum Collector Current (IC): .9 A; Transistor Element Material: SILICON;
MSC81020
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 1.5 A; Case Connection: BASE;
MSC81325M
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 880 W; Maximum Collector Current (IC): 24 A; Highest Frequency Band: L BAND;
MSC80197
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3200 MHz; Maximum Collector Current (IC): .7 A; No. of Terminals: 2;
MSC81010
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 1 A; Terminal Form: FLAT;
MSC81058
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 1 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MSC82005
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 1 A; Package Style (Meter): FLANGE MOUNT;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 1 A; JESD-30 Code: O-CRFM-F2;
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