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SD1398

STMicroelectronics

SD1398 by STMicroelectronics

SD1398 by STMicroelectronics is a NPN RF Power BJT with 6 terminals and 53W power dissipation. Ideal for amplifiers in the UHF band, it has a max operating temp of 200 °C and max collector-emitter voltage of 24V. Suitable for surface mount applications with flat terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,486 parts In-Stock

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2,486

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Vyrian

USA . 2,031 parts In-Stock

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2,031

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Anansix

USA . 1,108 parts In-Stock

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1,108

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,472 parts In-Stock

1+ parts

$0.400

100+ parts

-

1k+ parts

$0.360

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1,472

$0.400

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$0.360

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MKK Technologies

India . 509 parts In-Stock

1+ parts

$0.753

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-

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509

$0.753

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DigiPath Technology Company

USA . 509 parts In-Stock

1+ parts

$0.753

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509

$0.753

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Corphita

USA . 1,887 parts In-Stock

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1,887

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Parana Technologies

USA . 277 parts In-Stock

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$0.478

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277

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$0.478

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Overview

Unlock the power of ultra-high frequency band technology with the SD1398 RF Power Bipolar Junction Transistor by STMicroelectronics. This NPN transistor offers unparalleled performance and reliability, making it perfect for amplifier applications. With a maximum power dissipation of 53W and a maximum collector-emitter voltage of 24V, this transistor is designed to deliver exceptional results. Trust in STMicroelectronics' reputation for quality and innovation, and experience the value and benefits that the SD1398 brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN type transistors have high input impedance and fast switching speeds, making them suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and minimizes complexity.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard PCB layouts.

Terminal Form: FLAT

Flat terminal form enables easy soldering and secure connections.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for applications requiring ultra high frequency operation.

No. of Terminals: 6

Adequate number of terminals for efficient connectivity.

Maximum Power Dissipation (Abs): 53 W

High power dissipation capability allows for handling of high power levels without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and ease of mounting.

Minimum DC Current Gain (hFE): 20

Minimum DC current gain of 20 ensures reliable amplification performance.

Maximum Operating Temperature: 200 °C

High maximum operating temperature of 200 °C allows for operation in demanding environments.

Maximum Collector-Base Capacitance: 8.5 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 24 V

High maximum collector-emitter voltage rating of 24V provides robustness in voltage handling.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in transistor operation.

Maximum Collector Current (IC): 2.4 A

High maximum collector current rating allows for handling of large output currents.

Terminal Finish: NICKEL

Nickel terminal finish provides good conductivity and corrosion resistance.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options and PCB layout flexibility.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1398 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

8.5 pF

Maximum Collector-Emitter Voltage:

24 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDFM-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1398 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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