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BLW60C

NXP Semiconductors

BLW60C by NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): 9 A; Transistor Application: AMPLIFIER;

Median Price

$87.440

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 33 parts In-Stock

1+ parts

$87.440

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33

$87.440

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Vyrian

USA . 4,118 parts In-Stock

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4,118

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Digiode

USA . 3,537 parts In-Stock

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3,537

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Anansix

USA . 585 parts In-Stock

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585

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Manotoh

Italy . 80 parts In-Stock

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80

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Kronex Distribution GmbH

USA . 6 parts In-Stock

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6

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GES GmbH

Germany . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 539 parts In-Stock

1+ parts

$14.050

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539

$14.050

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Native Components

USA . 327 parts In-Stock

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$100.444

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$96.427

327

$100.444

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$96.427

Northwest PG Solutions

USA . 108 parts In-Stock

1+ parts

$110.489

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108

$110.489

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UNI Independent Distributors

Spain . 6,074 parts In-Stock

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6,074

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Corphita

USA . 652 parts In-Stock

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652

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLW60C attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

9 A

Maximum Collector-Base Capacitance:

160 pF

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-CRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

5 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BLW60C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-99-030-9022, 5961990309022

NIIN

990309022

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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