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BLW60

NXP Semiconductors

BLW60 by NXP Semiconductors

BLW60 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 8 A, operates up to 18 V, and offers a min power gain of 5 dB in very high frequency bands. Its flat, round package ensures easy mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,163 parts In-Stock

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Digiode

USA . 682 parts In-Stock

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682

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Vyrian

USA . 342 parts In-Stock

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342

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ABC Electronics Ltd.

UK . 21 parts In-Stock

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21

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Fibra_Brandt Electronic GMBH

Germany . 10 parts In-Stock

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10

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Distributors (Availability)

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One Stop Electronics

USA . 1,238 parts In-Stock

1+ parts

$43.050

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1,238

$43.050

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Corphita

USA . 3,768 parts In-Stock

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3,768

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UNI Independent Distributors

Spain . 3,645 parts In-Stock

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Northwest PG Solutions

USA . 1,773 parts In-Stock

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Native Components

USA . 317 parts In-Stock

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Overview

Unlock the power of high-performance amplification with the BLW60 from NXP Semiconductors. Renowned for their commitment to quality, NXP delivers exceptional reliability and efficiency in RF applications. The BLW60 excels in very high-frequency environments, making it ideal for modern communication technologies. Experience superior signal integrity and robust design, ensuring your projects achieve optimal performance and longevity. Choose BLW60—where innovation meets excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This lightweight and durable material enhances reliability and thermal stability, making it ideal for high-performance applications.

Polarity or Channel Type: NPN

NPN transistors are widely used and preferred for their efficient switching and amplification capabilities in various circuits.

Configuration: SINGLE

A single configuration simplifies circuit design while still providing robust performance, suitable for diverse applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this BJT can efficiently increase signal strength, making it ideal for audio and RF applications.

Minimum Power Gain (Gp): 5 dB

A minimum power gain of 5 dB ensures sufficient amplification for various circuits, optimizing overall system performance.

Package Shape: ROUND

The round shape can contribute to efficient heat dissipation and easier integration into circular circuit board designs.

Terminal Form: FLAT

Flat terminals allow for easier soldering and enhanced contact, improving the reliability of connections in electronic assemblies.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Capable of operating in very high frequency bands, making it suitable for applications such as telecommunications and RF broadcasting.

No. of Terminals: 4

Four terminals provide flexibility in circuit design, allowing for more complex configurations while maintaining simplicity.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount style allows for secure installation in various setups, ensuring stable operation during use.

Maximum Collector-Emitter Voltage: 18 V

With a maximum collector-emitter voltage of 18 V, this BJT is capable of handling moderate voltage applications efficiently.

Transistor Element Material: SILICON

Silicon provides excellent electrical properties, thermal conductivity, and durability for reliable performance in various environments.

Maximum Collector Current (IC): 8 A

A maximum collector current of 8 A ensures this transistor can support high-power applications, making it versatile in various designs.

Terminal Position: RADIAL

Radial terminal positioning enhances ease of mounting and contributes to the compactness of circuit designs.

Case Connection: ISOLATED

An isolated case connection helps prevent unintended electrical interference, improving the overall performance and reliability of the device.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLW60 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

5 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLW60 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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