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BLW60C

Asi Semiconductor

BLW60C by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 9 A;

Median Price

$87.440

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 33 parts In-Stock

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$87.440

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Vyrian

USA . 4,118 parts In-Stock

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Digiode

USA . 3,537 parts In-Stock

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Anansix

USA . 585 parts In-Stock

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Manotoh

Italy . 80 parts In-Stock

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Kronex Distribution GmbH

USA . 6 parts In-Stock

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GES GmbH

Germany . 1 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 539 parts In-Stock

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$14.050

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Native Components

USA . 327 parts In-Stock

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$100.444

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$96.427

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Northwest PG Solutions

USA . 108 parts In-Stock

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$110.489

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UNI Independent Distributors

Spain . 6,074 parts In-Stock

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Corphita

USA . 652 parts In-Stock

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLW60C attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Maximum Collector Current (IC):

9 A

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-CRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BLW60C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-99-030-9022, 5961990309022

NIIN

990309022

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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