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BLW89

NXP Semiconductors

BLW89 by NXP Semiconductors

BLW89 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications, featuring a max power dissipation of 9.6 W and a nominal transition frequency of 850 MHz. It operates in the ultra-high frequency band with a min power gain of 12 dB. Encased in a ceramic, metal-sealed package, it ensures reliability up to 200 °C.

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7

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Vyrian

USA . 4,329 parts In-Stock

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Digiode

USA . 3,303 parts In-Stock

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Anansix

USA . 1,111 parts In-Stock

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ComSIT Distribution GmbH

Germany . 200 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 179 parts In-Stock

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Manotoh

Italy . 31 parts In-Stock

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Rebound Electronics

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Native Components

USA . 541 parts In-Stock

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$8.264

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Northwest PG Solutions

USA . 2,055 parts In-Stock

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$9.090

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$8.181

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One Stop Electronics

USA . 407 parts In-Stock

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$58.050

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A-Z Elektronik GmbH

Germany . 4,766 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,177 parts In-Stock

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Corphita

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UNI Independent Distributors

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Overview

Elevate your RF applications with the BLW89 by NXP Semiconductors, a powerhouse in performance and reliability. Crafted from high-quality materials, this NPN transistor delivers exceptional amplification in the ultra-high frequency band, ensuring optimal signal clarity and strength. Ideal for demanding environments, the BLW89 is your go-to solution for robust designs, providing unmatched durability and efficiency that empower innovation across various industries. Experience excellence today!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This robust material ensures excellent thermal management and long-term reliability in high-power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplifying and switching applications, making this device versatile in various electronic circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces the footprint, ideal for compact systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor can effectively boost signal levels in audio, RF, and other analog applications.

Minimum Power Gain (Gp): 12 dB

With a minimum power gain of 12 dB, this transistor ensures substantial amplification capability, making it suited for low-level signal processing.

Package Shape: ROUND

Round package shapes can enhance thermal dissipation and simplify mounting in various applications.

Terminal Form: FLAT

Flat terminals facilitate easy soldering and connection, ensuring a reliable electrical interface in circuit assemblies.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Handling ultra high frequencies allows this transistor to be employed in advanced communication systems and specialized RF applications.

No. of Terminals: 4

Having four terminals provides flexibility in circuit design, and sufficient points for connection to power and signal paths.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount style allows for secure mounting in different configurations, enhancing integration into larger systems.

Maximum Power Dissipation Ambient: 9.6 W

A maximum power dissipation of 9.6 W means this transistor can handle significant power loads, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 10

A minimum hFE of 10 indicates decent current amplification, ensuring efficient operation in low-power signal applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor is reliable for operation in harsh environments without thermal failure.

Maximum Collector-Emitter Voltage: 30 V

Handling up to 30 V makes this transistor suitable for a variety of designs, from low-voltage to moderate power applications.

Transistor Element Material: SILICON

Silicon as the element material ensures good performance characteristics, including thermal stability and efficiency in signal processing.

Maximum Collector Current (IC): 0.32 A

The capability to handle a maximum collector current of 0.32 A allows this BJT to serve effectively in a broad range of applications.

Terminal Position: RADIAL

Radial terminal positioning enhances layout flexibility for PCB designs, accommodating various component arrangements.

Case Connection: ISOLATED

An isolated case connection ensures reduced risk of electrical interference and improved device safety in sensitive applications.

Nominal Transition Frequency (fT): 850 MHz

A nominal transition frequency of 850 MHz provides excellent performance for high-frequency amplifications and switching applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLW89 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-CRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

9.6 W

Minimum Power Gain (Gp):

12 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BLW89 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-01-247-9483, 5961012479483

NIIN

012479483

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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