Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BLW89 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications, featuring a max power dissipation of 9.6 W and a nominal transition frequency of 850 MHz. It operates in the ultra-high frequency band with a min power gain of 12 dB. Encased in a ceramic, metal-sealed package, it ensures reliability up to 200 °C.
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$9.090
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$58.050
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This robust material ensures excellent thermal management and long-term reliability in high-power applications.
NPN transistors are commonly used for amplifying and switching applications, making this device versatile in various electronic circuits.
A single configuration simplifies circuit design and reduces the footprint, ideal for compact systems.
Designed specifically for amplification, this transistor can effectively boost signal levels in audio, RF, and other analog applications.
With a minimum power gain of 12 dB, this transistor ensures substantial amplification capability, making it suited for low-level signal processing.
Round package shapes can enhance thermal dissipation and simplify mounting in various applications.
Flat terminals facilitate easy soldering and connection, ensuring a reliable electrical interface in circuit assemblies.
Handling ultra high frequencies allows this transistor to be employed in advanced communication systems and specialized RF applications.
Having four terminals provides flexibility in circuit design, and sufficient points for connection to power and signal paths.
The post/stud mount style allows for secure mounting in different configurations, enhancing integration into larger systems.
A maximum power dissipation of 9.6 W means this transistor can handle significant power loads, making it suitable for demanding applications.
A minimum hFE of 10 indicates decent current amplification, ensuring efficient operation in low-power signal applications.
With a high maximum operating temperature, this transistor is reliable for operation in harsh environments without thermal failure.
Handling up to 30 V makes this transistor suitable for a variety of designs, from low-voltage to moderate power applications.
Silicon as the element material ensures good performance characteristics, including thermal stability and efficiency in signal processing.
The capability to handle a maximum collector current of 0.32 A allows this BJT to serve effectively in a broad range of applications.
Radial terminal positioning enhances layout flexibility for PCB designs, accommodating various component arrangements.
An isolated case connection ensures reduced risk of electrical interference and improved device safety in sensitive applications.
A nominal transition frequency of 850 MHz provides excellent performance for high-frequency amplifications and switching applications.
RF Power Bipolar Junction Transistors (BJT) BLW89 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Minimum Power Gain (Gp):
Qualification:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BLW89 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
NSN
5961-01-247-9483, 5961012479483
NIIN
012479483
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
SMBJ18CA
Telefunken Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
PIC18F4550-I/P
Microchip Technology
PIC18F4550-I/P by Microchip Technology is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring low power consumption and high-speed data processing. With 2048 RAM bytes and 256 Data EEPROM size, this CMOS technology-based microcontroller offers versatile performance in various embedded systems.
M39029/58360
Souriau
CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;
BAV99
MICRODIODE ELECTRONICS SHENZHEN CO LTD
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Sangdest Microelectronics (Nanjing)
1N4148
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Bourns
2N2222A
Texas Instruments
2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).
First Components International
BSS138BK,215
NXP Semiconductors
NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;
OHN3140U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
2N7002
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;
L78L05ABZ-AP
STMicroelectronics
L78L05ABZ-AP by STMicroelectronics is a BIPOLAR fixed positive single output standard regulator with an operating temperature range of -40 to 125°C. It has a nominal output voltage of 5V, max load regulation of 0.06%, and can handle a max output current of 0.07A. Ideal for applications requiring stable voltage regulation in various electronic devices.
Nte Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .115 A; No. of Terminals: 3;
SMMBT3904LT1G
Onsemi
SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.
American Power Devices
MMBT2222ALT1G
Rochester Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
LL4148
Shanghai Lunsure Electronic Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;
BLV946
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 9 dB;
PTB42003X
PTB42003X by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 14W, operates in the C band, and supports surface mount with a flat terminal design. Ideal for high-frequency amplification in compact systems.
RZ1214B65Y
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): 6 A; Highest Frequency Band: L BAND;
MC3346D
MC3346D by Onsemi is a NPN BJT with 5 elements, 14 terminals, and max. IC of 0.05A. It operates at 550MHz fT and has VCE of 15V. Ideal for RF applications due to its small outline package style and Gull Wing terminal form.
AT-64020
Broadcom
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; JESD-609 Code: e4; Highest Frequency Band: S BAND;
PTB23002U
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .25 A; Qualification: Not Qualified;
MRF13750HR5
RF Power Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
AM1011-300
STMicroelectronics' AM1011-300 is a NPN RF BJT with 1070W power dissipation, suitable for L Band applications. It has a max IC of 36A, hFE of 10, and operates up to 250 °C. The transistor is single-configured, surface-mountable, and features a ceramic-metal-sealed co-fired package.
SD1135-03
SD1135-03 by STMicroelectronics is a NPN RF BJT with 15W power dissipation, suitable for amplifier applications in VHF band. It has 4 terminals, max. collector current of 1.7A, and operates up to 200 °C. Ideal for high-frequency amplification needs due to its very high frequency band capability.
2SC2640
Toshiba
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 6 A; Terminal Form: FLAT;
AM81214-006
STMicroelectronics AM81214-006 is an NPN RF BJT transistor with a max power dissipation of 16.7W and min hFE of 15, ideal for L Band switching applications. It has a max IC of 0.82A, operates up to 250 °C, and comes in a ceramic-metal package with dual terminals for flange mount connection.
5962F0721803V9A
Renesas Electronics
RF Power Bipolar Transistors; JESD-609 Code: e4; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Gold (Au); Peak Reflow Temperature (C): 260; Qualification: Qualified;
BLV909T/R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
BLT94T/R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; JESD-30 Code: R-CDSO-G8; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;
AM81214-060
STMicroelectronics' AM81214-060 is a NPN RF BJT transistor with 6.6 dB power gain, ideal for L Band applications. It has a max power dissipation of 107W, operating up to 250 °C. The transistor features a flange mount package and is suitable for switching purposes in various electronic circuits.
BLV58
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 87 W; Maximum Collector Current (IC): 4 A; Minimum Power Gain (Gp): 10 dB;
PTB23003XA
PTB23003XA by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 0.5 A, operates up to 200 °C, and offers a min power gain of 8.75 dB in the C band. Its ceramic, metal-sealed package ensures durability in demanding environments.
BLV909-T
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL; Case Connection: ISOLATED;
2SC2290A
Toshiba's 2SC2290A is a NPN RF Power BJT with 175W power dissipation, ideal for high-frequency amplifier applications. Featuring a max collector-emitter voltage of 18V and a max collector current of 20A, this transistor operates at temperatures up to 175°C in a flange mount package.
BLS2731-10,114
NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS; JESD-30 Code: R-CDFM-F2;
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BLW80
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1250 MHz; Maximum Collector Current (IC): 1 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLW81
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): 2.5 A; Terminal Position: RADIAL;
BLW83
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 530 MHz; Maximum Power Dissipation (Abs): 76 W; Maximum Collector Current (IC): 3 A;
BLW84
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 10;
BLW85
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): 105 W; Maximum Collector Current (IC): 9 A;
BLW86
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 570 MHz; Maximum Power Dissipation (Abs): .105 W; Maximum Collector Current (IC): 4 A;
BLW87
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): 76 W; Maximum Collector Current (IC): 6 A;
BLW898
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Maximum Collector Current (IC): 3.7 A; Maximum Operating Temperature: 200 Cel;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 17 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 200 Cel;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 2.5 A; Transistor Application: AMPLIFIER;
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