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SD1449

STMicroelectronics

SD1449 by STMicroelectronics

SD1449 by STMicroelectronics is a NPN RF BJT with 4 terminals, operating in the ultra-high frequency band. It has a max power dissipation of 19.4W and can handle a collector-emitter voltage of 25V. Ideal for amplifier applications due to its high-frequency capabilities and silicon element material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,941 parts In-Stock

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1,941

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Anansix

USA . 1,117 parts In-Stock

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1,117

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Digiode

USA . 532 parts In-Stock

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532

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,163 parts In-Stock

1+ parts

$0.487

100+ parts

-

1k+ parts

$0.438

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2,163

$0.487

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$0.438

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MKK Technologies

India . 87 parts In-Stock

1+ parts

$0.915

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87

$0.915

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DigiPath Technology Company

USA . 87 parts In-Stock

1+ parts

$0.915

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87

$0.915

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Parana Technologies

USA . 958 parts In-Stock

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$0.582

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958

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$0.582

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Corphita

USA . 335 parts In-Stock

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335

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Overview

Unleash the power of innovation with the SD1449 by STMicroelectronics. Crafted with top-notch quality and precision, this RF Power Bipolar Junction Transistor (BJT) is a game-changer in the world of amplifiers. Ideal for ultra-high frequency bands, this NPN transistor offers a seamless single configuration with a flat terminal form for easy installation. With a maximum power dissipation of 19.4W and a maximum collector-emitter voltage of 25V, this transistor promises unparalleled performance and reliability. Elevate your amplifier projects to new heights with the SD1449 – where quality meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and durable, ideal for applications where weight and durability are important factors.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, making this transistor suitable for amplifier circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures straightforward integration into various electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance and reliability in amplification circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into circular or cylindrical enclosures, making it versatile for different design requirements.

Maximum Power Dissipation (Abs): 19.4 W

The high maximum power dissipation of 19.4W indicates that this transistor can handle high power levels, making it suitable for demanding amplifier applications.

No. of Terminals: 4

Having 4 terminals provides flexibility in circuit connections and allows for various configurations, enhancing the versatility of this transistor.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this transistor can withstand high-temperature environments, ensuring reliable performance in demanding conditions.

Maximum Collector-Base Capacitance: 7 pF

A low collector-base capacitance of 7pF helps to minimize signal distortion and improves high-frequency performance, making this transistor suitable for ultra high-frequency applications.

Maximum Collector-Emitter Voltage: 25 V

The high maximum collector-emitter voltage of 25V provides a wide operating voltage range, making this transistor versatile for different voltage requirements.

Maximum Collector Current (IC): 0.44 A

With a maximum collector current of 0.44A, this transistor can handle moderate current levels, suitable for various amplifier applications.

Terminal Position: RADIAL

The radial terminal position simplifies installation and facilitates easy connection to other components, enhancing the usability of this transistor.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1449 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH EFFICIENCY

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1449 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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