Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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2N4440 by Texas Instruments is a NPN RF BJT with 40V VCEO, 1.5A IC, and 400MHz fT. Ideal for high-frequency applications due to its metal package and 11W Ptot. Suitable for amplification in RF circuits requiring low hFE of 10.
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Metal package provides better heat dissipation, allowing the transistor to handle higher power levels without overheating.
NPN transistors are commonly used in amplification and switching applications, making this transistor versatile for different circuit designs.
Single configuration simplifies circuit design and makes it easier to integrate into existing systems.
Round shape allows for easy mounting and installation in various applications.
Wire terminals make it easy to connect the transistor to external components and create stable connections.
Three terminals provide necessary connections for input, output, and control signals, enabling proper functionality within a circuit.
High maximum power dissipation allows the transistor to handle high power levels without getting damaged.
Post/stud mount package style offers easy installation and secure mounting in various applications.
Having a minimum DC current gain of 10 ensures stable and predictable amplification characteristics in circuits.
High maximum operating temperature allows the transistor to operate reliably in demanding environments without performance degradation.
High maximum collector-emitter voltage rating provides flexibility in circuit design and allows for higher voltage applications.
Silicon is a common semiconductor material known for its reliability, efficiency, and durability, making this transistor a reliable choice for many applications.
High maximum collector current rating allows the transistor to handle high current loads without getting damaged.
Upper terminal position makes it easier to connect and integrate the transistor into circuits with minimal interference.
High nominal transition frequency allows the transistor to operate at high frequencies, making it suitable for RF applications and high-speed switching circuits.
RF Power Bipolar Junction Transistors (BJT) 2N4440 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Texas Instruments
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Element Material:
Nominal Transition Frequency (fT):
2N4440 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-00-443-4413, 5961004434413, 5961-14-315-5695, 5961143155695
NIIN
004434413, 143155695
Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.
President, CEO
Haviv Ilan
Chairman
Richard K. Templeton
Senior VP, CFO
Rafael R. Lizardi
M - Fab
Fabrication
Fab Initiation
1997
USA
South Portland
Wafer Capacity
32,000
D - FAB
1966
Dallas
42,000
D MOS - 6
2002
25,000
D MOS - 5
1995
75,000
Miho - 8
1980
Japan
Inashiki
43,000
S FAB 1
Sherman
91,000
F - FAB
2001
Germany
Freising
37,000
R Fab 1
2010
Richardson
40,000
D HC Line
1999
2,000
JV3
Aizu Wakamatsu
45,000
C - FAB
2007
China
Chengdu
30,000
L - Fab
2015
Lehi
70,000
R - Fab 2
2022
S - FAB 2
2025
S - FAB 3
2028
1N4148
Semitronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N2222A
Loras Industries
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM358AN
Samsung
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Transys Electronics
Terry Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V;
1N4148WT-7
Diodes Incorporated
1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.
SS14
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Yangzhou Yangjie Electronics
BSS138
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Panjit International
FDLL4148
Onsemi
FDLL4148 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.004 us. With a max forward voltage of 1V and output current of 0.2A, it is ideal for applications requiring fast switching speeds in electronic circuits. The diode's glass package body material and isolated case connection make it suitable for surface mount designs operating at temperatures up to 175°C.
2N7002
Teledyne Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;
SMBJ18CA
Silicon Standard
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;
LM358M
Texas Instruments
LM358M by Texas Instruments is an Operational Amplifier with 2 functions, featuring a max input offset voltage of 9000 uV and a nominal voltage of 5 V. It is commonly used in applications requiring high common mode rejection ratio and low bias current, such as sensor interfaces and signal conditioning circuits.
STM32H743ZIT6
STMicroelectronics
STM32H743ZIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications, offering features such as 21 timers, CAN and USB connectivity, and low power mode.
Semicoa
M24308/2-1F
Bel Fuse
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
BDP954H6327XTSA1
Infineon Technologies
Infineon's BDP954H6327XTSA1 is a PNP RF Power BJT with 100V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mount assembly.
SD1411
SD1411 by STMicroelectronics is a NPN RF Power BJT with 6 terminals and a max power dissipation of 330W. It operates in the VHF band, has a max collector-emitter voltage of 55V, and can handle up to 40A collector current. Ideal for high-power RF applications requiring very high frequency operation.
BLY93C
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 625 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
2N5641
Microsemi
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 1 A;
SD1733
SD1733 by STMicroelectronics is a NPN RF Power BJT with 55V VCEO, 3.25A IC, and 127W Ptot. Ideal for amplifier applications in the VHF band due to its high frequency capabilities and silicon element material. Package style is post/stud mount with 4 terminals in a round shape.
BLV38
BLV38 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 290 W, operates at very high frequencies, and offers a min power gain of 8 dB. Ideal for demanding RF environments, it ensures reliable performance.
SD1528-06
STMicroelectronics' SD1528-06 is a NPN RF BJT transistor with 1.5A IC, 87.5W Pd, and hFE of 10. Ideal for L Band applications, it's a single configuration transistor for switching purposes in surface mount design with flat terminals.
AM81719-040
STMicroelectronics AM81719-040 is a NPN BJT transistor with 6.7 dB power gain, ideal for L Band applications. It has a max power dissipation of 79.5W and can handle up to 4.8A collector current. Suitable for amplifier circuits requiring high frequency operation at temperatures up to 200 °C.
2SC2101
Toshiba
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 2 A; No. of Terminals: 4; Maximum Collector-Base Capacitance: 25 pF;
934055198114
NPN; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: BASE;
BLV90
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Terminal Form: FLAT; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
RZ1214B35Y
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 3 A; Terminal Form: FLAT;
SD1542-42
SD1542-42 by STMicroelectronics is a NPN RF Power BJT with 6 dB min power gain, ideal for L Band applications. It has a max power dissipation of 1670 W and can handle up to 45 A collector current. This single configuration transistor is designed for switching purposes in high-power environments.
5962F0721801V9A
Renesas Electronics
RF Power Bipolar Transistors; Terminal Finish: GOLD; Qualification: Qualified; JESD-609 Code: e4;
BLX15
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 275 MHz; Maximum Collector Current (IC): 6.5 A; Qualification: Not Qualified;
BLU56
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Minimum Power Gain (Gp): 12 dB; Terminal Position: DUAL;
2SC2879
Toshiba's 2SC2879 is an NPN RF Power BJT with a single configuration for amplifier applications. It offers a min power gain of 13 dB, max power dissipation of 250 W, and operates in the high-frequency band up to 100 MHz. Ideal for surface mount setups, it has a max collector current of 25 A and can handle temperatures up to 175°C.
AM1214-200
STMicroelectronics' AM1214-200 is an NPN RF BJT with 7 dB min power gain, ideal for L Band switching applications. It features a max power dissipation of 575 W, 40 V max collector-emitter voltage, and operates up to 250 °C. The transistor has a single configuration in a ceramic-metal-sealed co-fired package with flange mount style.
AM1517-012
STMicroelectronics' AM1517-012 is a NPN RF BJT with 8.5 dB min power gain, suitable for L Band applications. It has a max power dissipation of 27W, operating up to 200 °C, and features a flange mount package style.
S-AU14
RF Power Bipolar Transistors; Qualification: Not Qualified; Transistor Application: AMPLIFIER; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON;
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DRV3255EPAPRQ1
DRV3255EPAPRQ1 by Texas Instruments is a Motion Control IC with 64 terminals, operating at -40 to 150°C. It is an AEC-Q100 compliant automotive-grade IC for Brushless DC Motor control, supporting supply voltages from 5V to 90V and output currents up to 3.5A. The package style includes a flatpack with heat sink/slug, suitable for surface mount applications in automotive systems.
CC2662R1FTWRGZRQ1
CC2662R1FTWRGZRQ1 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU, 48 MHz clock frequency, and 81920 bytes of RAM. Ideal for industrial applications, it features 8 ADC channels, 32 DMA channels, and peripherals like AES and PWM for efficient system integration.
DRV8316RRGFR
DRV8316RRGFR by Texas Instruments is a motion control IC with a rectangular package and a terminal form of gull wing. It has a max output current of 8A and can operate at temperatures ranging from -40 to 125°C. This IC is commonly used as a brushless DC motor controller in automotive applications.
DS160PT801ACBR
DS160PT801ACBR by Texas Instruments is a bus controller IC with 339 terminals, operating at -40 to 85°C. It supports PCI bus compatibility with a data transfer rate of 2000 MBps. This CMOS technology device has a thin profile and fine pitch package suitable for industrial applications.
UCC27284DRCR
UCC27284DRCR by Texas Instruments is a MOSFET gate driver with 2 channels, capable of handling a max output current of 3.5A. It operates in automotive-grade temperatures (-40 to 125°C) and has a turn-on/off time of 30µs. This chip carrier package with very thin profile is suitable for high side driver applications requiring fast switching speeds.
TPS7A4301DGQR
TPS7A4301DGQR by Texas Instruments is an adjustable positive single output LDO regulator with a max output voltage of 14.5V and a dropout voltage of 0.6V. It operates in temperatures ranging from -40 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact spaces.
LMR43610MSC3RPERQ1
LMR43610MSC3RPERQ1 by Texas Instruments is a 9-terminal switching regulator with a max output voltage of 32V and max output current of 1A. Ideal for automotive applications, it operates b/w -40 to 150°C, featuring a buck switcher config and PWM control mode at up to 2200kHz frequency.
2N4440
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): 1.5 A;
Motorola
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Collector Current (IC): 1.5 A; JEDEC-95 Code: TO-60; Package Body Material: METAL;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): 1.5 A;
Raytheon Semiconductor
Solitron Devices
Thomson-csf Semiconductors
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Collector Current (IC): 1.5 A; Maximum Collector-Emitter Voltage: 40 V; JEDEC-95 Code: TO-60;
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