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2N4440

Texas Instruments

2N4440 by Texas Instruments

2N4440 by Texas Instruments is a NPN RF BJT with 40V VCEO, 1.5A IC, and 400MHz fT. Ideal for high-frequency applications due to its metal package and 11W Ptot. Suitable for amplification in RF circuits requiring low hFE of 10.

Median Price

$7.590

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 40 parts In-Stock

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$7.590

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40

$7.590

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Digiode

USA . 9,270 parts In-Stock

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9,270

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Vyrian

USA . 7,444 parts In-Stock

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7,444

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Anansix

USA . 1,145 parts In-Stock

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1,145

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Holdelec - ElecDif-Pro

France . 287 parts In-Stock

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287

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Resion

USA . 3 parts In-Stock

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PUI

USA . 2 parts In-Stock

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Distributors (Availability)

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ChromeModa Solutions

Germany . 1,333 parts In-Stock

1+ parts

$0.683

100+ parts

$0.560

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1,333

$0.683

$0.560

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IDEA Electronic Components Group

UK . 2,471 parts In-Stock

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$1.207

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$1.086

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2,471

$1.207

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$1.086

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Native Components

USA . 627 parts In-Stock

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$1.233

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627

$1.233

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Northwest PG Solutions

USA . 2,796 parts In-Stock

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$1.356

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$1.356

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DigiPath Technology Company

USA . 3,804 parts In-Stock

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$2.270

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3,804

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MKK Technologies

India . 1,802 parts In-Stock

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$2.270

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1,802

$2.270

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AZTECH Wire

Italy . 336 parts In-Stock

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$18.842

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336

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One Stop Electronics

USA . 1,427 parts In-Stock

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$33.050

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Corphita

USA . 3,657 parts In-Stock

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Supply Digital

USA . 1,516 parts In-Stock

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1,516

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Parana Technologies

USA . 1,267 parts In-Stock

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$1.443

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1,267

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$1.443

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Overview

Upgrade your RF power applications with the Texas Instruments 2N4440. Designed with high-quality materials and precision engineering, this NPN bipolar junction transistor offers outstanding performance and reliability. Whether you're in the telecommunications, radar, or industrial control industries, this transistor's maximum power dissipation of 11W and high collector current of 1.5A ensure seamless operation in demanding environments. Trust Texas Instruments for cutting-edge technology that pushes the boundaries of what's possible.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides better heat dissipation, allowing the transistor to handle higher power levels without overheating.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile for different circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into existing systems.

Package Shape: ROUND

Round shape allows for easy mounting and installation in various applications.

Terminal Form: WIRE

Wire terminals make it easy to connect the transistor to external components and create stable connections.

No. of Terminals: 3

Three terminals provide necessary connections for input, output, and control signals, enabling proper functionality within a circuit.

Maximum Power Dissipation (Abs): 11 W

High maximum power dissipation allows the transistor to handle high power levels without getting damaged.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount package style offers easy installation and secure mounting in various applications.

Minimum DC Current Gain (hFE): 10

Having a minimum DC current gain of 10 ensures stable and predictable amplification characteristics in circuits.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows the transistor to operate reliably in demanding environments without performance degradation.

Maximum Collector-Emitter Voltage: 40 V

High maximum collector-emitter voltage rating provides flexibility in circuit design and allows for higher voltage applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability, efficiency, and durability, making this transistor a reliable choice for many applications.

Maximum Collector Current (IC): 1.5 A

High maximum collector current rating allows the transistor to handle high current loads without getting damaged.

Terminal Position: UPPER

Upper terminal position makes it easier to connect and integrate the transistor into circuits with minimal interference.

Nominal Transition Frequency (fT): 400 MHz

High nominal transition frequency allows the transistor to operate at high frequencies, making it suitable for RF applications and high-speed switching circuits.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2N4440 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-60

JESD-30 Code:

O-MUPM-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4440 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-443-4413, 5961004434413, 5961-14-315-5695, 5961143155695

NIIN

004434413, 143155695

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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