Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MRB11040W by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 3 A, operates up to 200 °C, and offers a min power gain of 10 dB in the L band. Its ceramic, metal-sealed package ensures durability in demanding environments.
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The robust ceramic and metal-sealed co-fired package ensures durability and reliability, making the transistor suitable for high-performance applications.
The NPN configuration is ideal for amplifier applications, providing efficient signal amplification which is essential for RF power applications.
The single configuration allows for simpler circuit design, enabling easier integration into various RF systems.
Designed specifically for amplification, this transistor excels at improving signal strength, making it perfect for RF communications.
Surface mount technology allows for compact designs and automated assembly processes, enhancing manufacturing efficiency.
A minimum power gain of 10 dB ensures effective signal amplification, contributing to high-performance output.
The rectangular shape promotes efficient space utilization in circuit boards, facilitating easier integration into applications.
Flat terminals ensure better surface contact during mounting, which can enhance thermal and electrical performance.
Operating in the L band, this transistor is suitable for various communication applications, including satellite and radar systems.
With two terminals, this transistor is simple to connect and makes troubleshooting easier in electronic circuits.
Flange mounting provides strong mechanical support, enhancing stability during operation and ensuring reliable performance.
With a high maximum operating temperature, this transistor can perform reliably in demanding environments.
The 20 V maximum collector-emitter voltage allows for versatility in various RF applications without compromising performance.
Silicon as the primary material offers excellent thermal stability and performance characteristics, making it ideal for RF applications.
A maximum collector current of 3 A provides robust current handling capabilities, allowing for effective power amplification.
Dual terminal positioning provides flexibility for circuit design, simplifying layouts and improving overall performance.
Base connection enhances the capability of the transistor to effectively amplify signals, ensuring efficient operation in amplifier applications.
RF Power Bipolar Junction Transistors (BJT) MRB11040W attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
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Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Minimum Power Gain (Gp):
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Transistor Element Material:
MRB11040W Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
1N4148
Compensated Devices
RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;
BSS138
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;
SMBJ18CA
Yageo
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358AN
Signetics
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
FDN306P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;
Silicon Standard
MMBT3904-7-F
Diodes Incorporated
Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.
SS14
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;
BAV99
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;
LM317T
Comset Semiconductors
Other Regulators; No. of Terminals: 3; Terminal Pitch: 2.54 mm; Minimum Output Voltage-1: 1.2 V; Technology: BIPOLAR; Operating Temperature (TJ-Max): 125 Cel;
2N2222A
Tt Electronics Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
1N4148WT-7
1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.
ULN-2803A
Sprague Electric
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
LM107H/883C
General Electric Solid State
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Wideband: NO;
MBR0520LT1
Motorola
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Renesas Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Laube Technology
CRCW06030000Z0EAHP
Vishay Intertechnology
Vishay Intertechnology's CRCW06030000Z0EAHP is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating temp range -55 to 155 °C, it's SMT package style makes it ideal for automotive applications meeting AEC-Q200 standard.
BLV958
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 15 A; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;
MAX2602ESA+T
Maxim Integrated
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Transistor Element Material: SILICON; JESD-609 Code: e3;
PTB23003XA
PTB23003XA by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 0.5 A, operates up to 200 °C, and offers a min power gain of 8.75 dB in the C band. Its ceramic, metal-sealed package ensures durability in demanding environments.
2SC3597E
Onsemi
Onsemi's 2SC3597E is an NPN RF Power BJT with a max. collector-emitter voltage of 60V and max. collector current of 0.5A. Ideal for switching applications, it has a nominal transition frequency of 800MHz. Package style is flange mount with through-hole terminals in a rectangular shape.
SD4701
STMicroelectronics
SD4701 by STMicroelectronics is a NPN RF BJT transistor with 145W power dissipation, suitable for amplifier applications in the UHF band. It has a max collector-emitter voltage of 30V, operates at up to 200 °C, and features a flange mount package style.
PTB20170
Infineon Technologies
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6.7 A; Terminal Form: FLAT; No. of Elements: 1;
BLY88C
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON;
2SC2510A
Toshiba
Toshiba's 2SC2510A is an NPN RF BJT with a max. collector current of 20A and max. power dissipation of 250W, ideal for high-frequency amplifier applications. It features a ceramic-metal-sealed co-fired package, flat terminals, and operates at up to 175°C, making it suitable for flange mount configurations in the high-frequency band.
BFG591TRL13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;
LV2024E45RTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .0011 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL;
BLS2731-50,114
NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Qualification: Not Qualified; Transistor Application: AMPLIFIER;
RX1214B170W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 15 A; Qualification: Not Qualified;
AM0912-080
STMicroelectronics' AM0912-080 is a NPN RF BJT transistor with 8.4 dB min power gain, ideal for L Band applications. It has a max power dissipation of 220 W and can handle up to 7 A collector current, suitable for high-power switching operations in various electronic devices.
LTE42008RTRAY
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .25 A; Highest Frequency Band: C BAND; Transistor Element Material: SILICON;
933779950112
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .6 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BFQ108
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .3 A; Transistor Application: AMPLIFIER;
BFT99
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3300 MHz; Maximum Power Dissipation (Abs): 4 W; Maximum Collector Current (IC): .35 A;
BLV101A
BLV101A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 8.5 dB, operates at ultra-high frequencies, and supports up to 10 A collector current. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
BLV909-T
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL; Case Connection: ISOLATED;
LTE42008R
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .45 A; Maximum Power Dissipation Ambient: 7.5 W; Highest Frequency Band: C BAND;
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MRB11175Y
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 12 A; Terminal Position: DUAL;
MRB11350Y
NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum Power Gain (Gp): 7 dB; No. of Elements: 1;
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