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MRB11040W

NXP Semiconductors

MRB11040W by NXP Semiconductors

MRB11040W by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 3 A, operates up to 200 °C, and offers a min power gain of 10 dB in the L band. Its ceramic, metal-sealed package ensures durability in demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,003 parts In-Stock

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2,003

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Digiode

USA . 1,742 parts In-Stock

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Vyrian

USA . 826 parts In-Stock

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826

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One Stop Electronics

USA . 872 parts In-Stock

1+ parts

$51.050

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872

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UNI Independent Distributors

Spain . 4,811 parts In-Stock

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Corphita

USA . 2,331 parts In-Stock

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Overview

Unlock unparalleled performance with the MRB11040W from NXP Semiconductors, a leader in innovative semiconductor solutions. Crafted for reliability and efficiency, this NPN RF Power BJT excels in amplifier applications, ensuring robust signal integrity for your projects. Its durable ceramic-metal sealed package guarantees longevity under high temperatures, making it ideal for demanding environments. Choose MRB11040W to elevate your designs with precision and quality that only NXP can deliver.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The robust ceramic and metal-sealed co-fired package ensures durability and reliability, making the transistor suitable for high-performance applications.

Polarity or Channel Type: NPN

The NPN configuration is ideal for amplifier applications, providing efficient signal amplification which is essential for RF power applications.

Configuration: SINGLE

The single configuration allows for simpler circuit design, enabling easier integration into various RF systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor excels at improving signal strength, making it perfect for RF communications.

Surface Mount: YES

Surface mount technology allows for compact designs and automated assembly processes, enhancing manufacturing efficiency.

Minimum Power Gain (Gp): 10 dB

A minimum power gain of 10 dB ensures effective signal amplification, contributing to high-performance output.

Package Shape: RECTANGULAR

The rectangular shape promotes efficient space utilization in circuit boards, facilitating easier integration into applications.

Terminal Form: FLAT

Flat terminals ensure better surface contact during mounting, which can enhance thermal and electrical performance.

Highest Frequency Band: L BAND

Operating in the L band, this transistor is suitable for various communication applications, including satellite and radar systems.

No. of Terminals: 2

With two terminals, this transistor is simple to connect and makes troubleshooting easier in electronic circuits.

Package Style (Meter): FLANGE MOUNT

Flange mounting provides strong mechanical support, enhancing stability during operation and ensuring reliable performance.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can perform reliably in demanding environments.

Maximum Collector-Emitter Voltage: 20 V

The 20 V maximum collector-emitter voltage allows for versatility in various RF applications without compromising performance.

Transistor Element Material: SILICON

Silicon as the primary material offers excellent thermal stability and performance characteristics, making it ideal for RF applications.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3 A provides robust current handling capabilities, allowing for effective power amplification.

Terminal Position: DUAL

Dual terminal positioning provides flexibility for circuit design, simplifying layouts and improving overall performance.

Case Connection: BASE

Base connection enhances the capability of the transistor to effectively amplify signals, ensuring efficient operation in amplifier applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MRB11040W attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRB11040W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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