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SD1390

STMicroelectronics

SD1390 by STMicroelectronics

SD1390 by STMicroelectronics is an NPN RF BJT transistor with 4 terminals, suitable for ultra high frequency band applications. It has a max power dissipation of 8.33W and operates at temperatures up to 200 °C. With a transition frequency of 470MHz, it is ideal for amplifier circuits in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,072 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,072

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-

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Anansix

USA . 920 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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920

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Vyrian

USA . 335 parts In-Stock

1+ parts

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335

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Speed Components Ltd

Israel . 30 parts In-Stock

1+ parts

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30

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,278 parts In-Stock

1+ parts

$0.866

100+ parts

-

1k+ parts

$0.779

10k+ parts

-

2,278

$0.866

-

$0.779

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MKK Technologies

India . 1,309 parts In-Stock

1+ parts

$1.628

100+ parts

-

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1,309

$1.628

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DigiPath Technology Company

USA . 1,309 parts In-Stock

1+ parts

$1.628

100+ parts

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10k+ parts

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1,309

$1.628

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Parana Technologies

USA . 1,301 parts In-Stock

1+ parts

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100+ parts

$1.035

1k+ parts

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1,301

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$1.035

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Corphita

USA . 370 parts In-Stock

1+ parts

-

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370

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Overview

Unleash the power of innovation with the SD1390 by STMicroelectronics, a cutting-edge RF Power BJT that delivers exceptional quality and performance. Manufactured by industry leader STMicroelectronics, this transistor offers unmatched reliability and precision for amplifier applications in the ultra-high-frequency band. With a maximum operating temperature of 200 °C and a flat terminal form, the SD1390 provides customers with superior value and benefits, making it the perfect choice for demanding electronic projects where excellence is non-negotiable. Elevate your designs with the SD1390 and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material combination ensures durability and reliability in various operating conditions, making it a suitable choice for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification purposes, making this product ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making the product easier to use in various applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving space and reducing assembly time.

Package Shape: ROUND

The round package shape offers uniformity and ease of handling during installation, ensuring a secure fit in compact spaces.

Maximum Power Dissipation: 8.33 W

With a high power dissipation capability, this transistor can handle heavy workloads and maintain performance under demanding conditions.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature tolerance makes this transistor suitable for use in environments with elevated temperatures, ensuring reliability and longevity.

Maximum Collector-Emitter Voltage: 24 V

The high voltage rating allows for flexibility in different circuit designs and applications, making it versatile for various voltage requirements.

Nominal Transition Frequency: 470 MHz

With a high transition frequency, this transistor is capable of handling high-frequency signals efficiently, making it ideal for applications requiring fast response times.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1390 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

DIFFUSED EMITTER BALLAST RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

5 pF

Maximum Collector-Emitter Voltage:

24 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-CRDB-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SD1390 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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