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2N3927

NXP Semiconductors

2N3927 by NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1.5 A; Maximum Operating Temperature: 200 Cel;

Median Price

$171.910

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 4 parts In-Stock

1+ parts

$171.910

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4

$171.910

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Vyrian

USA . 8,864 parts In-Stock

1+ parts

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8,864

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Digiode

USA . 8,413 parts In-Stock

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8,413

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Anansix

USA . 1,669 parts In-Stock

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1,669

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ComSIT Distribution GmbH

Germany . 14 parts In-Stock

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14

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GES GmbH

Germany . 6 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,886 parts In-Stock

1+ parts

$0.334

100+ parts

-

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$1.560

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1,886

$0.334

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$1.560

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DigiPath Technology Company

USA . 1,281 parts In-Stock

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$0.368

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1,281

$0.368

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ChromeModa Solutions

Germany . 5,418 parts In-Stock

1+ parts

$0.375

100+ parts

$0.308

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5,418

$0.375

$0.308

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IDEA Electronic Components Group

UK . 1,880 parts In-Stock

1+ parts

$0.375

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$0.338

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1,880

$0.375

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$0.338

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One Stop Electronics

USA . 1,949 parts In-Stock

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$8.050

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1,949

$8.050

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AZTECH Wire

Italy . 417 parts In-Stock

1+ parts

$12.891

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417

$12.891

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Northwest PG Solutions

USA . 2,161 parts In-Stock

1+ parts

$21.021

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$18.919

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2,161

$21.021

$18.919

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Native Components

USA . 1,873 parts In-Stock

1+ parts

$6,211.920

100+ parts

$6,087.682

1k+ parts

$6,025.562

10k+ parts

$5,963.443

1,873

$6,211.920

$6,087.682

$6,025.562

$5,963.443

Corphita

USA . 8,330 parts In-Stock

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8,330

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Supply Digital

USA . 553 parts In-Stock

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553

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UNI Independent Distributors

Spain . 407 parts In-Stock

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407

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Assy Fe

Spain . 1 parts In-Stock

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1

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2N3927 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

45 pF

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Minimum DC Current Gain (hFE):

5

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-MUPM-P3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

23 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

UPPER

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

2N3927 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-01-026-1566, 5961010261566, 5961-14-299-7575, 5961142997575

NIIN

010261566, 142997575

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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