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PZ2327B15U

NXP Semiconductors

PZ2327B15U by NXP Semiconductors

PZ2327B15U by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 32W, operates at frequencies in the S band, and withstands temperatures up to 200 °C. Its flat terminal design ensures efficient surface mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,268 parts In-Stock

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Digiode

USA . 1,646 parts In-Stock

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1,646

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Anansix

USA . 694 parts In-Stock

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694

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One Stop Electronics

USA . 1,122 parts In-Stock

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$2.050

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$2.050

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Corphita

USA . 4,659 parts In-Stock

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4,659

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UNI Independent Distributors

Spain . 752 parts In-Stock

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Overview

Unlock the power of precision with the PZ2327B15U from NXP Semiconductors, a leader in innovative RF solutions. Designed for exceptional amplifier performance, this high-quality NPN transistor boasts robust thermal stability, ensuring reliability even in demanding environments. Its compact, ceramic-sealed package makes it ideal for various applications—from telecommunications to industrial equipment. Experience enhanced efficiency and durability that translate into superior product performance and longevity!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The robust ceramic and metal-sealed co-fired package offers excellent durability and thermal stability, making it ideal for high-performance applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications due to their high speed and greater control, enhancing versatility in circuits.

Configuration: SINGLE

A single configuration allows for simplified circuit design and integration, making it suitable for various compact electronic applications.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor provides reliable signal amplification, crucial for audio and RF applications.

Surface Mount: YES

The surface mount capability enables efficient space utilization on printed circuit boards, facilitating modern design requirements.

Minimum Power Gain (Gp): 7 dB

With a minimum power gain of 7 dB, this transistor ensures effective amplification, ensuring strong signal transmission in various applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient layout and assembly on PCBs, optimizing space and connectivity.

Terminal Form: FLAT

Flat terminals facilitate easier and reliable soldering, leading to improved electrical performance and reduced potential for failure.

Highest Frequency Band: S BAND

Designed to operate in the S band, this transistor is suitable for radar, communications, and other RF applications, ensuring performance in the specified range.

No. of Terminals: 2

With just two terminals, this transistor simplifies design and reduces potential points of failure in electronic circuits.

Maximum Power Dissipation (Abs): 32 W

A maximum power dissipation of 32 W allows for high performance without overheating, ensuring reliability in demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides a secure and stable attachment, which is essential for maintaining performance under various operational conditions.

Maximum Power Dissipation Ambient: 32 W

This specification indicates consistent performance without overheating in ambient conditions, making the transistor suitable for various environments.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature of 200 °C, this transistor can function effectively in extreme conditions, enhancing its application range.

Maximum Collector-Emitter Voltage: 15 V

With a maximum voltage rating of 15 V, this transistor can handle substantial voltages, providing flexibility in different circuit designs.

Transistor Element Material: SILICON

Silicon is known for its excellent electrical properties and thermal stability, contributing to the overall performance and reliability of the transistor.

Maximum Collector Current (IC): 2.1 A

The capacity to handle a maximum collector current of 2.1 A makes this transistor suitable for high-load applications, improving overall circuit effectiveness.

Terminal Position: DUAL

Dual terminal position allows for flexible integration into various circuit layouts, enhancing design adaptability.

Case Connection: BASE

Base case connection ensures efficient operation and reliable performance within electronic circuits, particularly for amplifier applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) PZ2327B15U attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

32 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

7 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PZ2327B15U Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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