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BLV21

NXP Semiconductors

BLV21 by NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): 1.75 A;

Median Price

$69.000

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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RFMW

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American Microsemiconductor Inc.

USA . 15 parts In-Stock

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$69.000

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Vyrian

USA . 5,861 parts In-Stock

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Digiode

USA . 3,037 parts In-Stock

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Anansix

USA . 1,720 parts In-Stock

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ComSIT Distribution GmbH

Germany . 15 parts In-Stock

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Fibra_Brandt Electronic GMBH

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Native Components

USA . 348 parts In-Stock

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Northwest PG Solutions

USA . 2,372 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,852 parts In-Stock

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UNI Independent Distributors

Spain . 5,896 parts In-Stock

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Alle Elektronik GmbH

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Corphita

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Glotronic Ltd.

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLV21 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

36 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BLV21 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

1680-14-355-3251, 1680143553251

NIIN

143553251

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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