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MZ0912B100Y

NXP Semiconductors

MZ0912B100Y by NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 7 dB;

Median Price

$374.070

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 108 parts In-Stock

1+ parts

$374.070

100+ parts

$351.630

1k+ parts

$329.180

10k+ parts

-

108

$374.070

$351.630

$329.180

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,177 parts In-Stock

1+ parts

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4,177

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Anansix

USA . 1,656 parts In-Stock

1+ parts

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1,656

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Digiode

USA . 1,544 parts In-Stock

1+ parts

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1,544

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Semi Source

USA . 5 parts In-Stock

1+ parts

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 287 parts In-Stock

1+ parts

$20.050

100+ parts

-

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287

$20.050

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A-Z Elektronik GmbH

Germany . 7,038 parts In-Stock

1+ parts

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7,038

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Corphita

USA . 3,561 parts In-Stock

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3,561

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UNI Independent Distributors

Spain . 2,921 parts In-Stock

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2,921

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Perfect Parts

USA . 128 parts In-Stock

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128

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MZ0912B100Y attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

DIFFUSED EMITTER BALLASTING RESISTORS

Case Connection:

BASE

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

Moisture Sensitivity Level (MSL):

NOT APPLICABLE

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

7 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MZ0912B100Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-394-0072, 5961013940072

NIIN

013940072

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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