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SD1439

STMicroelectronics

SD1439 by STMicroelectronics

SD1439 by STMicroelectronics is a NPN RF BJT transistor with 4 terminals, suitable for amplifier applications in the UHF band. It has a max power dissipation of 8.75W, hFE of 15, and VCE of 24V. Ideal for high-frequency amplification due to its silicon element material and radial terminal position.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,612 parts In-Stock

1+ parts

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4,612

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Anansix

USA . 2,739 parts In-Stock

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2,739

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Digiode

USA . 2,195 parts In-Stock

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2,195

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 804 parts In-Stock

1+ parts

$1.243

100+ parts

-

1k+ parts

$1.119

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804

$1.243

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$1.119

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MKK Technologies

India . 1,259 parts In-Stock

1+ parts

$2.337

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1,259

$2.337

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DigiPath Technology Company

USA . 1,259 parts In-Stock

1+ parts

$2.337

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1,259

$2.337

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Parana Technologies

USA . 1,055 parts In-Stock

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-

100+ parts

$1.486

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1,055

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$1.486

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Corphita

USA . 994 parts In-Stock

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994

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Overview

Unlock unparalleled performance with the SD1439 RF Power BJT by STMicroelectronics. Crafted with precision and expertise, this NPN transistor boasts a single configuration ideal for amplifier applications in the ultra-high frequency band. With a maximum power dissipation of 8.75W and a minimum DC current gain of 15, this transistor offers superior quality and reliability. Elevate your projects to new heights with the SD1439, delivering exceptional value and unmatched benefits to customers across various industries.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good thermal and electrical insulation properties, making the transistor more reliable and durable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and usage, making it easier to integrate into various electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

The round shape allows for efficient heat dissipation and easy mounting in electronic systems.

Terminal Form: FLAT

The flat terminal form ensures easy and secure connections in the circuit.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the ultra-high frequency band, making it suitable for high-frequency applications.

No. of Terminals: 4

Having 4 terminals provides flexibility in circuit connections and integration.

Maximum Power Dissipation (Abs): 8.75 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount package style allows for easy and secure mounting on various surfaces.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures proper amplification in the circuit.

Maximum Operating Temperature: 200 °C

Capable of operating at high temperatures, making it suitable for various environmental conditions.

Maximum Collector-Base Capacitance: 5 pF

Low collector-base capacitance helps in reducing signal distortion and improving overall performance.

Maximum Collector-Emitter Voltage: 24 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon-based transistors offer good performance characteristics and reliability.

Maximum Collector Current (IC): 0.22 A

Capable of handling a maximum collector current of 0.22 A, making it suitable for various current amplification applications.

Terminal Position: RADIAL

Radial terminal position allows for easy connections and mounting in radial circuits.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1439 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH EFFICIENCY

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

5 pF

Maximum Collector-Emitter Voltage:

24 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1439 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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