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AM2931-125

STMicroelectronics

AM2931-125 by STMicroelectronics

STMicroelectronics' AM2931-125 is a NPN RF BJT transistor with 500W power dissipation, ideal for S Band applications. Featuring a single configuration and 16A max collector current, it operates up to 250 °C in a ceramic-metal package suitable for switching purposes.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,194 parts In-Stock

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4,194

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Vyrian

USA . 2,188 parts In-Stock

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2,188

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Anansix

USA . 829 parts In-Stock

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829

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Sunrise Surplus Inc.

USA . 2 parts In-Stock

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2

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 311 parts In-Stock

1+ parts

$1.522

100+ parts

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$1.370

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311

$1.522

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$1.370

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MKK Technologies

India . 144 parts In-Stock

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$2.861

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144

$2.861

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DigiPath Technology Company

USA . 144 parts In-Stock

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$2.861

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144

$2.861

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Northwest PG Solutions

USA . 1,452 parts In-Stock

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1,452

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Parana Technologies

USA . 625 parts In-Stock

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$1.819

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625

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$1.819

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Corphita

USA . 346 parts In-Stock

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346

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Native Components

USA . 212 parts In-Stock

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212

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Overview

Experience unparalleled performance and reliability with the AM2931-125 RF Power BJT by STMicroelectronics. As a trusted manufacturer in the industry, STMicroelectronics delivers cutting-edge technology for various applications, including switching in the S BAND frequency range. With a maximum power dissipation of 500W and a maximum collector current of 16A, this NPN transistor offers exceptional value and benefits to customers looking for high-quality components. Trust STMicroelectronics for superior products that exceed your expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides excellent thermal conductivity and high reliability, making this product suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their high efficiency and fast switching speeds.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easier to integrate into various systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and efficiency in switching operations.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular package shape provides a stable and secure mounting solution, ensuring reliable operation even in demanding environments.

Highest Frequency Band: S BAND

Operating in the S band frequency range, this transistor is ideal for applications requiring high frequency performance.

Maximum Power Dissipation (Abs): 500 W

With a high maximum power dissipation, this transistor can handle large power levels without overheating, ensuring long-term reliability.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers easy mounting and secure connections, making it suitable for various industrial and electronic applications.

Minimum DC Current Gain (hFE): 30

The minimum DC current gain of 30 ensures consistent and reliable amplification of input signals, resulting in stable performance.

Maximum Operating Temperature: 250 °C

With a high maximum operating temperature of 250 °C, this transistor can withstand elevated temperatures, making it suitable for high-temperature environments.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its stability and reliability, ensuring consistent performance over time.

Maximum Collector Current (IC): 16 A

The high maximum collector current rating of 16 A allows this transistor to handle large current loads, making it suitable for high-power applications.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and connection options, allowing for versatile applications in various electronic systems.

Case Connection: BASE

The base case connection simplifies the circuit layout and helps improve thermal management, enhancing the overall performance and reliability of the transistor.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM2931-125 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

250 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AM2931-125 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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