Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SD1407 by STMicroelectronics is a NPN RF Power BJT with 270W power dissipation, 36V max collector-emitter voltage, and 20A max collector current. Ideal for high-frequency band applications, it features a single configuration in a round plastic/epoxy package with flange mount style.
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$1.957
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The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for long-lasting performance in various applications.
NPN transistors are commonly used in amplification and switching applications, providing high efficiency and low power consumption.
Single configuration simplifies the circuit design and makes the transistor easy to integrate into different electronic systems.
The round package shape allows for easy mounting and efficient heat dissipation, ensuring optimal performance under high-frequency operation.
Designed for high-frequency applications, this transistor offers superior performance in radio frequency power amplifier circuits.
With a high maximum power dissipation, this transistor can handle high power levels without overheating, ensuring reliable operation in demanding conditions.
The flange mount package style provides convenient mounting options and mechanical stability, making it suitable for industrial and commercial environments.
The minimum DC current gain of 10 ensures consistent and reliable amplification of signals, making this transistor ideal for audio and RF amplification applications.
With a high maximum operating temperature of 200 °C, this transistor can withstand elevated temperatures, ensuring stable performance in harsh environments.
The high maximum collector-emitter voltage rating of 36V allows for safe operation at high voltages, making this transistor suitable for power switching applications.
Silicon transistors offer excellent performance characteristics, such as high gain, low noise, and high reliability, making them a preferred choice for various electronic applications.
With a high maximum collector current rating of 20A, this transistor can handle large current flows, making it suitable for power amplifier and motor control applications.
The nickel terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable electrical connections for optimal performance.
The radial terminal position simplifies the installation process and allows for easy connections in various electronic circuits, enhancing overall system efficiency.
With a peak reflow temperature of 260 °C, this transistor can withstand the soldering process during assembly, ensuring proper bonding and connections for reliable performance.
RF Power Bipolar Junction Transistors (BJT) SD1407 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
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Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
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Transistor Element Material:
SD1407 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-14-416-9701, 5961144169701
NIIN
144169701
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
BSS138W-7-F
Diodes Incorporated
Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
FDV304P
Onsemi
The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
LM107H/883
Linear Technology
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
1N4148WS
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138LT1G
BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.
SS14
Jinan Jingheng Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Hitachi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
M39029/58-360
Fct Electronic
CONNECTOR ACCESSORY; IEC Conformity: NO; Alternate Contact Sources: MILITARY; MIL Conformity: YES; Contact Gender: MALE; MIL-Connector Accessory Name: CONTACT;
DS18B20U
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Equivalence Code: TSSOP8,.19;
Maxim Integrated
DS18B20U by Maxim Integrated is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
BAV99
Frontier Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
08055C104KAT2A
KYOCERA AVX
08055C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
DS18B20Z/T&R
DS18B20Z/T&R by Maxim Integrated is a 12-bit digital temperature sensor with a max supply voltage of 5.5V and an accuracy of 0.50°C. It features a 1-Wire interface, operates b/w -55°C to 125°C, and is ideal for applications requiring precise temperature monitoring in compact spaces.
STM32H743BIT6
STMicroelectronics
STM32H743BIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 208 terminals, and 1085440 bytes of RAM. It features 2 DAC channels, 32 ADC channels, and operates at a max clock frequency of 48 MHz. Ideal for industrial applications requiring high-speed processing and extensive peripheral connectivity.
BAT54C-7-F
BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.
LM358N
Samsung
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
MBR130T1G
MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.
2N7002
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;
DS18B20U+
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: SQUARE; Housing: PLASTIC; Minimum Supply Voltage: 3 V;
North American Philips Discrete Products Div
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .1 A;
BLV2048
NXP Semiconductors
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 20 A; Package Shape: RECTANGULAR;
ISL73128RHF/PROTO
Renesas Electronics
RF Power Bipolar Transistors; JESD-609 Code: e4; Terminal Finish: GOLD;
BDP948H6327XTSA1
Infineon Technologies
Infineon's BDP948H6327XTSA1 is a PNP RF Power BJT with 45V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with gull wing terminals for surface mounting.
C3-28
Asi Semiconductor
C3-28 by Asi Semiconductor is a NPN RF BJT with 4 terminals, 10W power dissipation, and fT of 600MHz. Ideal for ultra-high frequency band amplification applications due to its ceramic-metal package and silicon transistor element. Operates at max temp of 200°C in a single configuration with flat terminals.
MAX2601ESA+T
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Maximum Collector-Emitter Voltage: 15 V; Minimum DC Current Gain (hFE): 100;
2N4041
Texas Instruments
2N4041 by Texas Instruments is an NPN RF BJT with 400 MHz fT, 40V VCEO, and 18W Ptot. Ideal for high-frequency applications in a round DISK BUTTON package with flat terminals.
2SC5023
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .2 A; JESD-30 Code: R-PSFM-T3;
BLU11/SL
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Maximum Collector Current (IC): .4 A; Terminal Position: RADIAL;
RO2731B20W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 2.7 A; Maximum Operating Temperature: 200 Cel;
BLY92C/01
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): 1.5 A; JESD-30 Code: O-CRDB-F4;
SD1414-12
SD1414-12 by STMicroelectronics is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 150W, operates at up to 200 °C, and supports ultra-high frequency bands. Its flat terminal design allows for easy surface mounting.
MRF450
New Jersey Semiconductor Products
NPN; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 25 V; No. of Elements: 1; Transistor Element Material: SILICON;
BDP948H6433TR
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Package Shape: RECTANGULAR;
MSC81058
STMicroelectronics' MSC81058 is a NPN RF BJT with 29W power dissipation, ideal for L Band applications. Featuring single configuration, it has 1A max collector current and 10pF collector-base capacitance. Suitable for amplifier circuits, this transistor operates up to 200 °C in a ceramic-metal package.
ISL73128RHX/SAMPLE
RF Power Bipolar Transistors;
BLX68
BLX68 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 5.4 dB, operates at ultra-high frequencies, and withstands temperatures up to 150 °C. Its flat, round package ensures efficient performance in compact designs.
MRF426
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 3 A; Package Shape: ROUND;
BLV909
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE;
RZ3135B14W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.4 A; JESD-30 Code: R-CDFM-F2; Package Shape: RECTANGULAR;
2SC2104
Toshiba
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Maximum Collector-Emitter Voltage: 17 V; No. of Terminals: 4;
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SD1457
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 108 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 10 A;
SD1437
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 19.4 W; Maximum Collector Current (IC): .45 A; No. of Terminals: 4;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 9 A; JESD-30 Code: R-PDFM-F6;
SD1456
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 16 A; Maximum Collector-Emitter Voltage: 33 V;
SD1446
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 12 A; Maximum Collector-Emitter Voltage: 18 V; JESD-30 Code: O-PRFM-F4;
SD1433
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; Maximum Collector Current (IC): 2.5 A; Transistor Element Material: SILICON;
SD1458
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT;
SD1439
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8.75 W; Maximum Collector Current (IC): .22 A; JESD-30 Code: O-PRPM-F4;
SD1423
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 2.5 A; Transistor Application: AMPLIFIER;
SD1455
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 8 A; JESD-30 Code: O-PRPM-F4;
SD1448
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31.8 W; Maximum Collector Current (IC): .85 A; Package Shape: ROUND;
SD1425
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; Maximum Collector Current (IC): .15 A; Minimum DC Current Gain (hFE): 20;
SD1456(TCC3100)
NPN; Surface Mount: YES; Maximum Collector Current (IC): 16 A; Maximum Operating Temperature: 200 Cel; Transistor Element Material: SILICON; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
SD1414
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 9 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
SD1434
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 10 A; No. of Elements: 1;
SD1405
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; JESD-30 Code: O-PRFM-F4; Qualification: Not Qualified;
SD1411
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 40 A; Minimum DC Current Gain (hFE): 15;
SD1424
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .15 A; Minimum DC Current Gain (hFE): 20; Maximum Collector-Emitter Voltage: 25 V;
SD1449
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 19.4 W; Maximum Collector Current (IC): .44 A; Transistor Element Material: SILICON;
SD1407
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 20 A; Qualification: Not Qualified;
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