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RXB06150W

NXP Semiconductors

RXB06150W by NXP Semiconductors

RXB06150W by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector-emitter voltage of 15V, a nominal transition frequency of 540 MHz, and operates at temperatures up to 200 °C. Its ceramic, metal-sealed package ensures reliability in ultra-high frequency environments.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 2,822 parts In-Stock

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Anansix

USA . 802 parts In-Stock

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Digiode

USA . 217 parts In-Stock

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One Stop Electronics

USA . 1,244 parts In-Stock

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UNI Independent Distributors

Spain . 6,219 parts In-Stock

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Corphita

USA . 4,325 parts In-Stock

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Overview

Elevate your RF applications with the RXB06150W from NXP Semiconductors, a trusted leader in innovative technology. This high-performance RF Power BJT offers exceptional quality and reliability, ensuring optimal signal amplification for ultra-high frequency operations. Its robust ceramic and metal-sealed design guarantees durability under extreme conditions, making it perfect for telecommunications and broadcasting. Experience unmatched power gain and efficiency that drives superior performance in every project.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package provides excellent thermal stability and reliability, making it suitable for high-performance applications.

Polarity or Channel Type: NPN

As an NPN configuration, this transistor is ideal for amplification and switching applications, ensuring efficient operation and signal integrity.

Configuration: SINGLE

A single configuration simplifies the design and integration into circuits, enhancing ease of use and reducing complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor delivers strong performance in signal modulation and amplification tasks.

Surface Mount: YES

Surface mount capability allows for compact design and ease of assembly, facilitating integration into modern electronic systems.

Minimum Power Gain (Gp): 7.5 dB

A minimum power gain of 7.5 dB indicates effective amplification characteristics, crucial for enhancing signal strength.

Package Shape: RECTANGULAR

The rectangular shape is conducive to space-efficient layouts on circuit boards, optimizing design real estate.

Terminal Form: FLAT

Flat terminals ensure secure connections and compatibility with various mounting solutions, enhancing reliability.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operation in the ultra high frequency band enables applications in advanced communication technologies and high-speed signal processing.

No. of Terminals: 2

Two terminals streamline connectivity and make the transistor easy to integrate into simple circuits.

Package Style (Meter): FLANGE MOUNT

The flange mount style aids in stable installation, useful in applications requiring durable and vibration-resistant components.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature enhances the transistor's reliability under extreme conditions, making it suitable for rugged applications.

Maximum Collector-Emitter Voltage: 15 V

A maximum voltage of 15 V ensures safe operation within a wide range of applications without exceeding limits.

Transistor Element Material: SILICON

Silicon as the element material guarantees good conductivity and performance, contributing to the overall effectiveness of the transistor.

Terminal Position: DUAL

Dual terminal positioning allows for flexible integration into various circuit configurations and layouts.

Case Connection: BASE

The base case connection facilitates efficient signal processing and helps ensure consistent performance across applications.

Nominal Transition Frequency (fT): 540 MHz

A nominal transition frequency of 540 MHz indicates capability in handling high-frequency signals, ideal for communications and RF applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) RXB06150W attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

BASE

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

7.5 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

RXB06150W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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