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SD1542-42

STMicroelectronics

SD1542-42 by STMicroelectronics

SD1542-42 by STMicroelectronics is a NPN RF Power BJT with 6 dB min power gain, ideal for L Band applications. It has a max power dissipation of 1670 W and can handle up to 45 A collector current. This single configuration transistor is designed for switching purposes in high-power environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,101 parts In-Stock

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6,101

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Anansix

USA . 2,053 parts In-Stock

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2,053

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Digiode

USA . 705 parts In-Stock

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705

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,139 parts In-Stock

1+ parts

$1.838

100+ parts

-

1k+ parts

$1.654

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1,139

$1.838

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$1.654

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MKK Technologies

India . 1,437 parts In-Stock

1+ parts

$3.457

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1,437

$3.457

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DigiPath Technology Company

USA . 1,437 parts In-Stock

1+ parts

$3.457

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1,437

$3.457

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Corphita

USA . 3,256 parts In-Stock

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3,256

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Parana Technologies

USA . 378 parts In-Stock

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$2.198

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378

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$2.198

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Overview

Unleash the power of innovation with the SD1542-42 RF Power Bipolar Junction Transistor by STMicroelectronics. Known for their superior quality and cutting-edge technology, STMicroelectronics delivers top-of-the-line products like the SD1542-42 that are designed for high-performance applications in the switching category. With its NPN configuration, the SD1542-42 offers customers unmatched power gain, efficient operation, and reliable performance. Whether used in L Band applications or other frequency bands, this transistor guarantees optimal results, making it a valuable investment for any project. Elevate your designs with the SD1542-42 and experience the difference that STMicroelectronics brings to the table.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package body material provides excellent durability and heat dissipation, making this product suitable for high-power applications.

Polarity or Channel Type: NPN

The NPN polarity ensures compatibility with a wide range of circuit designs and applications, enhancing flexibility in usage.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and high efficiency, making it ideal for power control circuits.

Surface Mount: YES

With surface mount capability, this product can be easily mounted on PCBs, saving space and simplifying assembly processes.

Minimum Power Gain (Gp): 6 dB

With a minimum power gain of 6 dB, this transistor provides amplification of the input signal, improving overall performance in signal processing applications.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact and efficient design, allowing for easy integration into electronic systems with limited space.

Terminal Form: FLAT

The flat terminal form ensures secure and stable connections, preventing signal loss and maintaining reliable performance.

Highest Frequency Band: L BAND

Operating in the L band frequency range, this transistor is suitable for high-frequency applications such as radar systems and communication equipment.

No. of Terminals: 2

With only 2 terminals, this transistor is easy to install and connect, reducing complexity in circuit layouts.

Maximum Power Dissipation (Abs): 1670 W

The high maximum power dissipation of 1670 W allows this transistor to handle high power levels, ensuring reliable performance in demanding environments.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides mechanical stability and easy mounting options, making it suitable for industrial and automotive applications.

Minimum DC Current Gain (hFE): 10

With a minimum DC current gain of 10, this transistor offers consistent and stable amplification of current signals, enhancing overall performance.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature of 200 °C allows this transistor to withstand extreme temperature conditions, ensuring reliable operation in harsh environments.

Transistor Element Material: SILICON

Constructed with silicon material, this transistor offers high performance, reliability, and efficiency, making it a top choice for critical applications.

Maximum Collector Current (IC): 45 A

With a maximum collector current of 45 A, this transistor can handle high current loads, making it suitable for power applications that require high current capabilities.

Terminal Position: DUAL

With dual terminal positions, this transistor provides multiple connection options, enhancing flexibility and ease of integration into circuit designs.

Case Connection: BASE

The base case connection ensures secure grounding and reliable performance, protecting the transistor from electrical disturbances and enhancing overall stability.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1542-42 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

6 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SD1542-42 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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