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SD1563

STMicroelectronics

SD1563 by STMicroelectronics

SD1563 by STMicroelectronics is an NPN RF Power BJT with a max power dissipation of 875W, ideal for ultra-high frequency band applications. Featuring a single configuration and flat terminal form, it operates at up to 175 °C with a max collector current of 21.6A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,576 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,576

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-

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Digiode

USA . 1,980 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,980

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-

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Vyrian

USA . 1,099 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,099

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 449 parts In-Stock

1+ parts

$1.017

100+ parts

-

1k+ parts

$0.915

10k+ parts

-

449

$1.017

-

$0.915

-

MKK Technologies

India . 790 parts In-Stock

1+ parts

$1.912

100+ parts

-

1k+ parts

-

10k+ parts

-

790

$1.912

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-

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DigiPath Technology Company

USA . 790 parts In-Stock

1+ parts

$1.912

100+ parts

-

1k+ parts

-

10k+ parts

-

790

$1.912

-

-

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Corphita

USA . 1,278 parts In-Stock

1+ parts

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100+ parts

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1,278

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Parana Technologies

USA . 953 parts In-Stock

1+ parts

-

100+ parts

$1.216

1k+ parts

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953

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$1.216

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Overview

Unleash the power of advanced RF technology with the SD1563 from STMicroelectronics. Crafted with precision and expertise, this RF Power BJT transistor offers unmatched performance and reliability for switching applications in the ultra-high-frequency band. With a maximum power dissipation of 875W and a maximum collector current of 21.6A, this transistor delivers exceptional value and benefits to customers seeking high-quality components for their projects. Experience seamless operation and superior functionality with the SD1563, the ultimate choice for your RF power needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides durability and reliability for long-term usage.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration with other NPN components in circuits, making it versatile for various applications.

Configuration: SINGLE

The single configuration simplifies the design and implementation of the transistor in circuits, reducing complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation in switching circuits.

Surface Mount: YES

Supports surface mount installation, making it suitable for compact electronic designs and easier PCB assembly.

Package Shape: SQUARE

The square package shape facilitates easy placement and mounting on circuit boards, optimizing space utilization.

Terminal Form: FLAT

The flat terminal form provides a stable connection and ease of soldering during installation.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for ultra-high frequency applications, ensuring reliable performance in high-frequency circuits.

Maximum Power Dissipation (Abs): 875 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure mounting and heat dissipation, ideal for high-power applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures for reliable operation.

Maximum Collector-Emitter Voltage: 28 V

The high maximum collector-emitter voltage rating allows for operation in circuits with higher voltage requirements.

Transistor Element Material: SILICON

Silicon transistor elements offer high performance and reliability, ensuring consistent operation over a long lifespan.

Maximum Collector Current (IC): 21.6 A

Capable of handling high collector currents, making it suitable for applications that require high current levels.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit connections, allowing for versatile usage in different configurations.

Case Connection: BASE

The base case connection simplifies the circuit design and layout, enhancing ease of use and installation.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1563 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

28 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

S-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

SQUARE

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SD1563 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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