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SD1541-01

STMicroelectronics

SD1541-01 by STMicroelectronics

STMicroelectronics' SD1541-01 is a NPN RF BJT with 22A IC, 1460W Pdiss, and L Band freq. Ideal for high-power applications in the RF domain due to its ceramic-metal package and flat terminal form. Suitable for use in communication systems requiring high-frequency amplification.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,629 parts In-Stock

1+ parts

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2,629

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Vyrian

USA . 990 parts In-Stock

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990

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Digiode

USA . 529 parts In-Stock

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529

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 474 parts In-Stock

1+ parts

$0.625

100+ parts

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1k+ parts

$0.562

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474

$0.625

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$0.562

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MKK Technologies

India . 161 parts In-Stock

1+ parts

$1.175

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161

$1.175

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DigiPath Technology Company

USA . 161 parts In-Stock

1+ parts

$1.175

100+ parts

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161

$1.175

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Corphita

USA . 3,982 parts In-Stock

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3,982

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Parana Technologies

USA . 2,326 parts In-Stock

1+ parts

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$0.747

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2,326

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$0.747

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Overview

Elevate your RF power applications with the SD1541-01 by STMicroelectronics. Crafted with precision and expertise, this NPN BJT transistor offers unrivaled quality and reliability. With a maximum power dissipation of 1460W and a high operating temperature of 200 °C, this transistor is designed to deliver exceptional performance in demanding L Band frequencies. Whether you're working on radar systems or communication equipment, the SD1541-01 provides the power and efficiency you need to succeed. Experience the difference with STMicroelectronics and revolutionize your RF power designs today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This package body material provides high reliability and durability, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile and widely compatible.

Configuration: SINGLE

The single configuration simplifies circuit design and allows for easy integration into various electronic systems.

Surface Mount: YES

Surface mount capability saves space and facilitates automated assembly processes, making this product efficient for mass production.

Package Shape: RECTANGULAR

The rectangular package shape is commonly used and easy to handle, making it convenient for installation and maintenance.

Terminal Form: FLAT

The flat terminal form ensures good electrical contact and heat dissipation, contributing to the overall performance and reliability of the product.

Highest Frequency Band: L BAND

Operating in the L band frequency range allows for high-speed signal amplification, making this product suitable for various communication and radar applications.

No. of Terminals: 2

Having only two terminals simplifies circuit connections and reduces complexity, making this product easy to use for designers and technicians.

Maximum Power Dissipation (Abs): 1460 W

With a high maximum power dissipation capacity, this product can handle large power loads without overheating, ensuring reliable operation in demanding environments.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides mechanical stability and easy mounting options, making installation and maintenance hassle-free.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 ensures consistent and predictable performance in amplification circuits, making this product suitable for high-gain applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions and prolonged use, ensuring long-term reliability.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product suitable for a wide range of industrial and consumer electronics applications.

Maximum Collector Current (IC): 22 A

A maximum collector current of 22 A allows for handling high power loads, making this product ideal for power amplification and switching applications.

Terminal Position: DUAL

Dual terminal positions provide flexibility in circuit design and allow for easy connections, making this product versatile and compatible with various electronic systems.

Case Connection: BASE

The base case connection ensures good thermal conduction and electrical isolation, enhancing the overall performance and reliability of the product.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1541-01 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

WITH EMITTER BALLASTING RESISTORS

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

5

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

SD1541-01 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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