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SD1530-01

STMicroelectronics

SD1530-01 by STMicroelectronics

SD1530-01 by STMicroelectronics is an NPN RF BJT transistor for switching applications. With a max power dissipation of 87.5W, it operates in L Band frequencies and handles a max collector current of 2.6A. This single configuration transistor comes in a round plastic package suitable for surface mount applications at temperatures up to 200 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,838 parts In-Stock

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2,838

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Vyrian

USA . 2,166 parts In-Stock

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2,166

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Anansix

USA . 126 parts In-Stock

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126

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 131 parts In-Stock

1+ parts

$0.519

100+ parts

-

1k+ parts

$0.467

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131

$0.519

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$0.467

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MKK Technologies

India . 238 parts In-Stock

1+ parts

$0.976

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238

$0.976

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DigiPath Technology Company

USA . 238 parts In-Stock

1+ parts

$0.976

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238

$0.976

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Corphita

USA . 3,678 parts In-Stock

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3,678

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Parana Technologies

USA . 658 parts In-Stock

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$0.620

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658

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$0.620

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Overview

Experience unmatched performance and reliability with the SD1530-01 RF Power BJT by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top-notch quality and precision in every product. Ideal for switching applications in the L Band frequency range, this transistor offers unparalleled efficiency and power dissipation capabilities. With its compact round package design and flat terminal form, the SD1530-01 is perfect for surface mount installations. Trust STMicroelectronics to deliver cutting-edge technology that exceeds expectations in performance and durability. Elevate your projects with the SD1530-01 and unlock endless possibilities in RF power applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high efficiency and low cost.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high reliability.

Surface Mount: YES

Surface mount compatibility allows for easy and efficient PCB assembly, saving time and reducing production costs.

Package Shape: ROUND

The round package shape is space-efficient and facilitates easy mounting in various electronic devices.

Terminal Form: FLAT

Flat terminals ensure secure connections and easy soldering, improving the overall reliability of the transistor.

Highest Frequency Band: L BAND

Suited for L Band applications, this transistor offers high performance and efficiency in this frequency range.

No. of Terminals: 4

The 4 terminals provide flexibility in circuit design and connectivity options, making the transistor versatile for different applications.

Maximum Power Dissipation (Abs): 87.5 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating, ensuring reliable operation.

Package Style (Meter): DISK BUTTON

The disk button package style provides a compact and efficient design, suitable for space-constrained applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for a wide range of operating environments.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and good thermal stability, making them a reliable choice for various applications.

Maximum Collector Current (IC): 2.6 A

Capable of handling a maximum collector current of 2.6 A, this transistor is suitable for medium-power applications that require high current capability.

Terminal Position: RADIAL

Radial terminal positioning simplifies the mounting and connection process, improving the overall usability of the transistor.

Case Connection: BASE

The base case connection ensures proper grounding and thermal management, enhancing the overall performance and reliability of the transistor.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1530-01 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

WITH EMITTER BALLASTING RESISTORS

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

O-PRDB-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SD1530-01 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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