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2010

Microsemi

2010 by Microsemi

Microsemi's 2010 RF Power BJT, NPN type, is a single configuration transistor with a max IC of 2A. Ideal for L Band applications, it features a ceramic-metal package and operates at up to 200°C. Suitable for amplification in surface mount designs with flange mount style packaging.

Median Price

$0.100

Lifecycle Status

Suppliers In-Stock

31

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RS Americas

USA . 12,185 parts In-Stock

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Mouser Electronics

USA . 33,669 parts In-Stock

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DigiKey

USA . 8,161 parts In-Stock

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Conrad

Germany . 570 parts In-Stock

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DB Roberts

USA . 155 parts In-Stock

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Distrelec

Netherlands . 24 parts In-Stock

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Newark

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Powell Electronics

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Verical

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Bürklin Elektronik

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Voyager Components

USA . 40 parts In-Stock

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TEDSS.com

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Nova Conductors

Japan . 34 parts In-Stock

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Rapid Electronics

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Quotebeam

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Galco

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TestEquity

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IBS Electronics

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Semicontronic

India . 17,957 parts In-Stock

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Continental Prestige Electronics

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Advanced Electronics

New Zealand . 76 parts In-Stock

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Allen Electronics Distributors

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Glotronic Ltd.

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Lucentia Tech

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Overview

Elevate your RF amplifier performance with the 2010 by Microsemi. Crafted with precision and quality in mind, this RF Power Bipolar Junction Transistor offers unparalleled reliability and efficiency for all your amplification needs. Whether you're looking to boost signal strength or enhance overall system performance, the 2010 delivers exceptional value and benefits to customers seeking top-notch quality. Say goodbye to subpar amplifiers and experience the difference with the 2010 by Microsemi.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and reliability for the transistor, ensuring a long lifespan and stable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile and suitable for a variety of uses.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Surface Mount: YES

Surface mount capability allows for easier PCB assembly and space-saving design, making it suitable for compact electronic devices.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on PCBs and easy integration into circuit designs.

Terminal Form: FLAT

Flat terminals provide a secure connection and ease of soldering during assembly.

Highest Frequency Band: L BAND

Suitable for applications in the L band frequency range, providing reliable performance for applications within this frequency range.

No. of Terminals: 2

Simple two-terminal design makes it easy to integrate into circuits and reduces complexity.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure mounting on a chassis or heat sink, improving heat dissipation and overall performance.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can withstand high temperature environments and maintain stable performance.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, ensuring consistent performance and durability.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, this transistor can handle high current applications with ease.

Terminal Finish: TIN LEAD

Tin lead finish provides a reliable and corrosion-resistant terminal surface for a secure connection and long-term performance.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and allows for easy connection in various configurations.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2010 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Microsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

2 A

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2010 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

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NIIN

016195263, 998394226, 994321609, 998788057, 145038181, 012896634, 002128854, 013631647, 015354220, 000773661, 001089233, 003993614, 000208847, 013807182, 151311396, 151359307, 994443526, 011698670, 121583795, 013668065, 015933676, 014299934, 219030186, 331162775, 011883158, 001804354, 006200541, 144636958, 004411222, 121886940, 142471235, 013258746, 142010769, 009340385, 014779928, 123433946, 002325703, 014258875, 013683546, 218123991, 010468857, 010473560, 216350980, 216350751, 121725583, 151234191, 997608960, 997610338, 016653203, 010766370, 144999170, 012861115, 001733157, 004468875, 005879930, 009595100, 011761968, 013482728, 013427789, 013769558, 121451487, 660288259, 660288262, 988524722, 991122578, 997844882, 997844881, 997938950, 997875082, 011321552, 011459058, 008404402, 002922675, 012468031, 150044494, 121316806, 151259794, 014557113, 008874009, 997185411, 001904223, 123065813, 990125625, 990125214, 990125173, 990125142, 990125639, 990125623, 990125665, 990125632, 990125626, 999115409, 999150208, 999446380, 999321261, 999115402, 999409035, 008224327, 012486415, 013215162, 142360086, 145141561, 996344527, 011671597, 001780078, 006999997, 009458933, 013034768, 011143162, 981083376, 145151380, 010339616, 012229607, 008380150, 176213278, 991176251, 144167285, 988015063, 004197564, 011758406, 222847089, 013267728, 145088420, 218909522, 008873793, 010804838, 008291752, 009908218, 000474883, 151288903, 142145231, 999496772, 016614736, 661173121, 219211523, 010704957, 013260744, 015906249, 330051604, 011202633, 014177930, 121721012, 331897868, 010462912, 011098583, 015047599, 219095791, 009000905, 144323991, 219022729, 997209193, 123292892, 330040070, 014212370, 015711554, 219043662, 012115475, 008813916, 011457836, 011541640, 990522995, 251358846, 151249135, 222120176, 222851799, 016562285, 015899257, 151483114, 012418869, 010758149, 171062304, 991384711, 011349977, 011399457, 151534577, 170474326, 251389616, 218054963, 251145071, 218764092, 222222955, 993469501, 004345976

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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