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BLU30/28

NXP Semiconductors

BLU30/28 by NXP Semiconductors

BLU30/28 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 8 dB, operates at ultra-high frequencies, and supports up to 4 A collector current. Its robust ceramic-metal sealed package ensures reliability in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,047 parts In-Stock

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3,047

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Digiode

USA . 2,729 parts In-Stock

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2,729

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Anansix

USA . 430 parts In-Stock

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430

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Distributors (Availability)

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One Stop Electronics

USA . 1,171 parts In-Stock

1+ parts

$7.050

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1,171

$7.050

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Native Components

USA . 104 parts In-Stock

1+ parts

$449.168

100+ parts

$440.185

1k+ parts

$435.693

10k+ parts

$431.201

104

$449.168

$440.185

$435.693

$431.201

Northwest PG Solutions

USA . 1,598 parts In-Stock

1+ parts

$494.085

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1,598

$494.085

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UNI Independent Distributors

Spain . 4,607 parts In-Stock

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4,607

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Corphita

USA . 1,044 parts In-Stock

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1,044

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Overview

Elevate your electronic designs with the BLU30/28 from NXP Semiconductors, a leader in innovative RF solutions. This high-quality NPN power transistor is perfect for amplifiers in ultra-high frequency applications, offering exceptional performance and reliability. With its robust ceramic-metal sealed packaging, it ensures durability under challenging conditions, making it ideal for telecommunications and industrial uses. Trust in NXP to deliver unmatched value and efficiency, empowering your projects to reach new heights!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic, metal-sealed cofired package provides excellent thermal stability and superior protection against environmental factors, making it ideal for high-performance applications.

Polarity or Channel Type: NPN

NPN configuration allows for efficient amplification and switching, which is essential in RF applications, ensuring faster operation and better performance.

Configuration: SINGLE

The single configuration simplifies design and integration into circuits, making it easier to implement in various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is optimized for delivering higher gain in RF circuits, providing better signal strength and clarity.

Surface Mount: YES

The surface mount capability makes it easier to incorporate into modern PCB designs, enhancing manufacturing efficiency and reducing overall size.

Minimum Power Gain (Gp): 8 dB

A minimum power gain of 8 dB ensures adequate amplification, making it suitable for various RF applications that require strong signal enhancement.

Package Shape: ROUND

The round package shape can improve thermal dissipation, thus enhancing reliability and performance in high-frequency applications.

Terminal Form: FLAT

Flat terminals provide easy soldering and connection, ensuring stable electrical performance and reliability during operation.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the UHF band, this transistor is suitable for a wide range of communication applications, ensuring it effectively handles high-frequency signals.

No. of Terminals: 6

The six-terminal design allows for versatile connections, facilitating complex circuit configurations and enhancing overall design flexibility.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides sturdy mounting, ensuring reliability and durability in high-vibration environments, ideal for professional and industrial applications.

Minimum DC Current Gain (hFE): 20

A minimum hFE of 20 allows for adequate current amplification, ensuring efficient operation in linear applications with low input signals.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can function reliably in harsh conditions, making it suitable for high-temperature environments.

Maximum Collector-Emitter Voltage: 32 V

A maximum collector-emitter voltage of 32 V provides versatility in circuit design, accommodating various applications without compromising performance.

Transistor Element Material: SILICON

Silicon material ensures low leakage currents and higher efficiency, contributing to better overall performance and signal integrity.

Maximum Collector Current (IC): 4 A

The capability to handle a maximum collector current of 4 A makes this transistor robust for power amplification applications, ensuring reliable performance under load.

Case Connection: ISOLATED

Isolated case connections enhance safety and reduce interference, making it suitable for sensitive RF applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLU30/28 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-CXFM-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

8 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

UNSPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLU30/28 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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