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SD1135

STMicroelectronics

SD1135 by STMicroelectronics

SD1135 by STMicroelectronics is a NPN RF BJT transistor with 4 terminals, operating in the ultra-high frequency band up to 470 MHz. It has a max power dissipation of 15W and can handle a collector current of 2A. Ideal for amplifier applications, this transistor offers a min DC current gain of 20 and operates at temperatures up to 175 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,157 parts In-Stock

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3,157

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Anansix

USA . 1,843 parts In-Stock

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1,843

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Vyrian

USA . 75 parts In-Stock

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75

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,800 parts In-Stock

1+ parts

$1.336

100+ parts

-

1k+ parts

$1.202

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1,800

$1.336

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$1.202

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MKK Technologies

India . 1,976 parts In-Stock

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$2.512

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1,976

$2.512

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DigiPath Technology Company

USA . 1,976 parts In-Stock

1+ parts

$2.512

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1,976

$2.512

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Corphita

USA . 1,610 parts In-Stock

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1,610

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Parana Technologies

USA . 805 parts In-Stock

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$1.597

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805

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$1.597

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Overview

Experience unparalleled performance and reliability with the SD1135 RF Power Bipolar Junction Transistor by STMicroelectronics. Designed for amplification in the ultra-high frequency band, this NPN transistor boasts a maximum power dissipation of 15W and a nominal transition frequency of 470 MHz. Whether you're working on amplifier projects or radio frequency applications, the SD1135 offers unmatched quality and value, making it the perfect choice for your electronic needs. Trust in STMicroelectronics for cutting-edge technology and superior components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration in most amplifier circuits, making it a versatile choice for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to work with for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Package Shape: ROUND

Round package shape allows for easy mounting and integration in various types of electronic circuits.

Terminal Form: FLAT

Flat terminal form provides stability and ease of connection in circuit assemblies.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra high frequency band applications, suitable for high-performance amplification at high frequencies.

No. of Terminals: 4

Four terminals provide flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 15 W

High maximum power dissipation allows for handling of higher power levels, ensuring reliability in operation.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount package style provides secure mounting options and ease of installation in electronic devices.

Minimum DC Current Gain (hFE): 20

Minimum DC current gain of 20 ensures sufficient gain for amplification purposes, contributing to overall performance.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for operation in a wide range of environmental conditions, ensuring reliability in various applications.

Maximum Collector-Emitter Voltage: 16 V

Maximum collector-emitter voltage of 16 V provides safety margin and protection against voltage spikes in the circuit.

Transistor Element Material: SILICON

Silicon transistor element material offers high performance and reliability in amplifier applications.

Maximum Collector Current (IC): 2 A

Maximum collector current of 2 A allows for handling higher current levels, suitable for various amplifier applications.

Terminal Position: RADIAL

Radial terminal position enables easy and reliable connections in circuit assemblies.

Nominal Transition Frequency (fT): 470 MHz

High nominal transition frequency of 470 MHz enables efficient amplification of high-frequency signals, suitable for advanced applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1135 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SD1135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-136-6856, 5961011366856

NIIN

011366856

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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