Loading...

2SC3597D

Onsemi

2SC3597D by Onsemi

Onsemi's 2SC3597D is an NPN RF Power BJT with a max. collector-emitter voltage of 60V and max. collector current of 0.5A. Ideal for switching applications, it has a nominal transition frequency of 800MHz and comes in a rectangular package style for through-hole mounting.

Median Price

$0.192

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7,675 parts In-Stock

1+ parts

-

100+ parts

$0.185

1k+ parts

$0.153

10k+ parts

$0.137

7,675

-

$0.185

$0.153

$0.137

DigiKey

USA . 7,675 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.230

7,675

-

-

-

$0.230

Verical

USA . 7,675 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.192

7,675

-

-

-

$0.192

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,384 parts In-Stock

1+ parts

$0.127

100+ parts

-

1k+ parts

-

10k+ parts

-

1,384

$0.127

-

-

-

Digiode

USA . 2,069 parts In-Stock

1+ parts

$0.144

100+ parts

-

1k+ parts

-

10k+ parts

-

2,069

$0.144

-

-

-

DigiKey Marketplace

USA . 7,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,800

-

-

-

-

Huijzer Components

Netherlands . 76 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

76

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 78 parts In-Stock

1+ parts

$0.127

100+ parts

-

1k+ parts

-

10k+ parts

-

78

$0.127

-

-

-

Corphita

USA . 1,609 parts In-Stock

1+ parts

$0.137

100+ parts

-

1k+ parts

-

10k+ parts

-

1,609

$0.137

-

-

-

Native Components

USA . 260 parts In-Stock

1+ parts

$0.523

100+ parts

-

1k+ parts

-

10k+ parts

-

260

$0.523

-

-

-

Northwest PG Solutions

USA . 567 parts In-Stock

1+ parts

$0.575

100+ parts

-

1k+ parts

-

10k+ parts

-

567

$0.575

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 14,804 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

14,804

-

-

-

-

Problanco Electronics

Mexico . 6,565 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,565

-

-

-

-

SupplyDigital Components

Austria . 6,540 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,540

-

-

-

-

Kulean Microsystems

USA . 6,043 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,043

-

-

-

-

TANS Electronics

Latvia . 5,628 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,628

-

-

-

-

UHIMA Technologies

Türkiye . 981 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

981

-

-

-

-

Continental Prestige Electronics

USA . 890 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.127

10k+ parts

-

890

-

-

$0.127

-

Assy Fe

Spain . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Overview

Elevate your RF power applications with the 2SC3597D by Onsemi. Known for their high-quality manufacturing, Onsemi delivers reliable products that excel in performance. This NPN bipolar junction transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 60V and a maximum collector current of 0.5A. With a nominal transition frequency of 800 MHz, this transistor provides unmatched value and efficiency for your projects. Upgrade to Onsemi's 2SC3597D and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, offering high efficiency and fast switching speeds.

Configuration: SINGLE

Simplifies circuit design and makes it easier to implement in different applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and are easier to solder onto a circuit board.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications requiring voltage levels up to 60 V.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice in electronics.

Maximum Collector Current (IC): 0.5 A

Suitable for low to moderate current applications, providing efficient operation.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Multiple terminal finish options ensure good conductivity and corrosion resistance for long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in circuits.

Nominal Transition Frequency (fT): 800 MHz

High transition frequency enables fast switching speeds and high-frequency operation.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SC3597D attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC3597D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20