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2SC3218-M

Renesas Electronics

2SC3218-M by Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 20;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 392 parts In-Stock

1+ parts

$1.245

100+ parts

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1k+ parts

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10k+ parts

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392

$1.245

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Northwest PG Solutions

USA . 610 parts In-Stock

1+ parts

$1.370

100+ parts

-

1k+ parts

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10k+ parts

-

610

$1.370

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SC3218-M attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

20

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SC3218-M Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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