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TSD4575

STMicroelectronics

TSD4575 by STMicroelectronics

TSD4575 by STMicroelectronics is an NPN RF Power BJT with a max collector current of 0.2A, suitable for amplifier applications in the ultra-high frequency band. It features a ceramic and metal-sealed co-fired package body material, surface mount capability, and a rectangular package shape with flange mount style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,395 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,395

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-

-

-

Anansix

USA . 1,826 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,826

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-

-

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Digiode

USA . 912 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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912

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,064 parts In-Stock

1+ parts

$1.585

100+ parts

-

1k+ parts

$1.427

10k+ parts

-

2,064

$1.585

-

$1.427

-

MKK Technologies

India . 1,359 parts In-Stock

1+ parts

$2.981

100+ parts

-

1k+ parts

-

10k+ parts

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1,359

$2.981

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-

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DigiPath Technology Company

USA . 1,359 parts In-Stock

1+ parts

$2.981

100+ parts

-

1k+ parts

-

10k+ parts

-

1,359

$2.981

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-

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Corphita

USA . 976 parts In-Stock

1+ parts

-

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976

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Parana Technologies

USA . 917 parts In-Stock

1+ parts

-

100+ parts

$1.895

1k+ parts

-

10k+ parts

-

917

-

$1.895

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-

Overview

Elevate your RF amplifier designs with the TSD4575 by STMicroelectronics. Crafted with precision and quality materials, this NPN RF power BJT offers unmatched performance in the ultra-high frequency band. Whether you're looking to boost signal strength or enhance transmission capabilities, this ceramic-metal sealed transistor provides reliability and efficiency. Experience seamless integration with its surface mount capability and rectangular package shape, giving you maximum flexibility in your applications. Trust STMicroelectronics for cutting-edge technology that delivers value and unparalleled benefits to customers seeking top-of-the-line components.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent protection and durability, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

NPN transistors have good amplification capabilities, making them ideal for amplifier applications.

Configuration: SINGLE

Single configuration transistors are simpler to use and maintain, making them a reliable choice for applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving design, making it suitable for compact setups.

Package Shape: RECTANGULAR

Rectangular shape provides easy handling and installation in various electronic devices.

Terminal Form: FLAT

Flat terminals offer a secure connection and ease of soldering, ensuring reliable performance.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ultra-high frequency band support ensures compatibility with high-frequency applications, delivering superior performance.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and reduces chances of error during installation.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides stability and secure mounting, ensuring reliability in various setups.

Transistor Element Material: SILICON

Silicon material offers high efficiency and reliability in electronic components, making it a preferred choice for transistors.

Maximum Collector Current (IC): 0.2 A

With a maximum collector current of 0.2 A, this transistor can handle moderate power requirements efficiently.

Terminal Position: DUAL

Dual terminal position offers flexibility in connecting the transistor to external circuits, enabling versatile application possibilities.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) TSD4575 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

TSD4575 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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