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SD1898

STMicroelectronics

SD1898 by STMicroelectronics

SD1898 by STMicroelectronics is a NPN RF BJT transistor with 87.5W power dissipation, suitable for L Band applications. It has a max collector current of 7.8A and operates at up to 200 °C temperature, making it ideal for amplifier circuits in high-frequency settings. The package style is flange mount with a square shape and flat terminals, offering easy surface-mount integration.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,649 parts In-Stock

1+ parts

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2,649

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Anansix

USA . 2,638 parts In-Stock

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2,638

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Vyrian

USA . 63 parts In-Stock

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63

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,763 parts In-Stock

1+ parts

$0.496

100+ parts

-

1k+ parts

$0.446

10k+ parts

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1,763

$0.496

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$0.446

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MKK Technologies

India . 1,827 parts In-Stock

1+ parts

$0.932

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1,827

$0.932

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DigiPath Technology Company

USA . 1,827 parts In-Stock

1+ parts

$0.932

100+ parts

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1,827

$0.932

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Corphita

USA . 3,985 parts In-Stock

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3,985

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Parana Technologies

USA . 2,003 parts In-Stock

1+ parts

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$0.593

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2,003

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$0.593

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Overview

Experience unmatched performance and reliability with the SD1898 RF Power BJT by STMicroelectronics. As pioneers in semiconductor technology, STMicroelectronics delivers top-notch quality in every product. The SD1898 is perfect for amplifier applications in the L Band, offering a maximum power dissipation of 87.5W and a maximum collector current of 7.8A. With its durable plastic package body material and NPN configuration, this transistor ensures optimal performance and longevity. Elevate your projects with the SD1898 and enjoy seamless operation and exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and heat dissipation, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, offering high input impedance and low output impedance for efficient signal amplification.

Configuration: SINGLE

Single configuration transistors are easier to design with and operate, making them suitable for a wide range of applications such as amplifiers.

Transistor Application: AMPLIFIER

Designed specifically for amplifying signals accurately and efficiently, making it ideal for use in audio or radio frequency applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient placement on circuit boards, reducing assembly time and costs.

Package Shape: SQUARE

The square shape provides a compact footprint, saving space on the PCB and allowing for efficient placement of components.

Terminal Form: FLAT

Flat terminals ensure a secure and stable connection, reducing the risk of signal loss or interference.

Highest Frequency Band: L BAND

Operates effectively in the L band frequency range, making it suitable for radio, radar, and satellite communication applications.

No. of Terminals: 2

Having only 2 terminals simplifies the design and operation of the transistor, making it reliable and easy to integrate into circuits.

Maximum Power Dissipation (Abs): 87.5 W

With a high power dissipation capacity, this transistor can handle large amounts of power without overheating, ensuring reliable performance.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides secure mounting for the transistor, preventing movement or damage during operation.

Minimum DC Current Gain (hFE): 15

A minimum current gain of 15 ensures stable and consistent amplification of input signals, maintaining signal integrity and accuracy.

Maximum Operating Temperature: 200 °C

With a high operating temperature range of 200 °C, this transistor can withstand extreme conditions, making it suitable for a variety of environments.

Maximum Collector-Emitter Voltage: 15 V

A high maximum collector-emitter voltage of 15V allows for efficient control and amplification of signals, ensuring reliable performance.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, reliability, and stability, making them ideal for a wide range of applications.

Maximum Collector Current (IC): 7.8 A

A high maximum collector current of 7.8A allows for the amplification of large signals, making this transistor suitable for high-power applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and allows for easy integration into various systems for enhanced functionality.

Case Connection: BASE

The base connection allows for easy control and modulation of the transistor, making it suitable for amplifier and switching applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1898 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

BASE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

S-PDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1898 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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