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SD1899

STMicroelectronics

SD1899 by STMicroelectronics

SD1899 by STMicroelectronics is an NPN RF BJT transistor with a single configuration for amplifier applications. It offers a min power gain of 9.3 dB, max power dissipation of 73W, and operates in the L band frequency range. Ideal for surface mount designs with a rectangular package shape and flat terminal form.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,475 parts In-Stock

1+ parts

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4,475

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Vyrian

USA . 3,849 parts In-Stock

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3,849

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Anansix

USA . 1,134 parts In-Stock

1+ parts

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1,134

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 623 parts In-Stock

1+ parts

$1.198

100+ parts

-

1k+ parts

$1.078

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623

$1.198

-

$1.078

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MKK Technologies

India . 537 parts In-Stock

1+ parts

$2.252

100+ parts

-

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537

$2.252

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DigiPath Technology Company

USA . 537 parts In-Stock

1+ parts

$2.252

100+ parts

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537

$2.252

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Corphita

USA . 2,254 parts In-Stock

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2,254

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Parana Technologies

USA . 2,033 parts In-Stock

1+ parts

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100+ parts

$1.432

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2,033

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$1.432

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Overview

Enhance your RF amplifier performance with the SD1899 by STMicroelectronics. Crafted with precision using high-quality materials, this NPN RF Power BJT boasts a single configuration and maximum power dissipation of 73W, making it ideal for L Band applications. With a minimum power gain of 9.3 dB and a DC current gain of 15, this transistor promises exceptional amplification capabilities. Trust in STMicroelectronics' expertise to deliver reliable, efficient solutions for your amplifier needs. Elevate your projects with the SD1899 and experience unmatched quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package offers good insulation properties and mechanical strength, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, allowing for easier implementation.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, saving space and reducing assembly time.

Minimum Power Gain (Gp): 9.3 dB

High minimum power gain ensures efficient signal amplification and improved overall performance.

Package Shape: RECTANGULAR

Rectangular package shape offers simplicity in design and integration, fitting easily into circuit layouts.

Terminal Form: FLAT

Flat terminals simplify soldering and connection processes, ensuring a secure and seamless electrical connection.

Highest Frequency Band: L BAND

Suitable for high-frequency applications, making it ideal for use in L band communication systems.

No. of Terminals: 2

Dual terminal design provides the necessary connections for proper operation while keeping the design simple and efficient.

Maximum Power Dissipation (Abs): 73 W

High maximum power dissipation allows for reliable operation at high power levels without overheating or damage.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers mechanical stability and easy mounting, ensuring secure installation in various applications.

Maximum Power Dissipation Ambient: 64.8 W

With a high maximum power dissipation ambient rating, the transistor can withstand elevated ambient temperatures for extended periods.

Minimum DC Current Gain (hFE): 15

High minimum DC current gain ensures stable and consistent amplification, enhancing overall performance.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, the transistor can operate in high-temperature environments without performance degradation.

Transistor Element Material: SILICON

Silicon transistor element provides high performance, reliability, and efficiency in signal amplification applications.

Maximum Collector Current (IC): 3.5 A

High maximum collector current rating allows for handling higher current levels, making it suitable for power amplifier applications.

Terminal Position: DUAL

Dual terminal position provides convenient and secure connection points for easy integration into circuits.

Case Connection: BASE

Base case connection simplifies circuit design and ensures proper electrical connections for optimal performance.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1899 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

64.8 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

9.3 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1899 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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