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BDP950H6327XTSA1

Infineon Technologies

BDP950H6327XTSA1 by Infineon Technologies

Infineon's BDP950H6327XTSA1 is a PNP RF Power BJT with 60V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mount assembly.

Median Price

$0.459

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 17 parts In-Stock

1+ parts

$0.970

100+ parts

$0.408

1k+ parts

$0.266

10k+ parts

$0.211

17

$0.970

$0.408

$0.266

$0.211

Arrow

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.426

10k+ parts

$0.244

1,000

-

-

$0.426

$0.244

Verical

USA . 534 parts In-Stock

1+ parts

-

100+ parts

$0.459

1k+ parts

$0.415

10k+ parts

-

534

-

$0.459

$0.415

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Chip1Stop

Japan . 534 parts In-Stock

1+ parts

-

100+ parts

$0.459

1k+ parts

$0.393

10k+ parts

$0.381

534

-

$0.459

$0.393

$0.381

RS (Exports)

UK . 80 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.429

10k+ parts

$0.381

80

-

-

$0.429

$0.381

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.510

100+ parts

-

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50

$0.510

-

-

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TME

Poland . 101 parts In-Stock

1+ parts

$0.771

100+ parts

$0.460

1k+ parts

$0.414

10k+ parts

-

101

$0.771

$0.460

$0.414

-

Digiode

USA . 54 parts In-Stock

1+ parts

$0.836

100+ parts

-

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-

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54

$0.836

-

-

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Schukat

Germany . 11,900 parts In-Stock

1+ parts

-

100+ parts

$0.438

1k+ parts

$0.302

10k+ parts

-

11,900

-

$0.438

$0.302

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VNN

France . 4,213 parts In-Stock

1+ parts

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4,213

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Vyrian

USA . 3,380 parts In-Stock

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3,380

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NAC Semi

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$1.190

10k+ parts

$1.100

2,000

-

-

$1.190

$1.100

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 6,202 parts In-Stock

1+ parts

$0.265

100+ parts

-

1k+ parts

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6,202

$0.265

-

-

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Semicontronic

India . 465 parts In-Stock

1+ parts

$0.362

100+ parts

$0.353

1k+ parts

$0.351

10k+ parts

-

465

$0.362

$0.353

$0.351

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Modulus Dynamics

Lithuania . 11,609 parts In-Stock

1+ parts

$0.392

100+ parts

$0.376

1k+ parts

$0.361

10k+ parts

-

11,609

$0.392

$0.376

$0.361

-

Corohmni

South Africa . 102 parts In-Stock

1+ parts

$0.392

100+ parts

-

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102

$0.392

-

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Continental Prestige Electronics

USA . 3,959 parts In-Stock

1+ parts

$0.510

100+ parts

-

1k+ parts

-

10k+ parts

$0.500

3,959

$0.510

-

-

$0.500

Argo Parts USA

USA . 2,478 parts In-Stock

1+ parts

$0.510

100+ parts

-

1k+ parts

-

10k+ parts

$0.495

2,478

$0.510

-

-

$0.495

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.510

100+ parts

$0.500

1k+ parts

-

10k+ parts

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100

$0.510

$0.500

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Component Stockers USA

USA . 70,386 parts In-Stock

1+ parts

$0.750

100+ parts

$0.450

1k+ parts

$0.560

10k+ parts

$0.450

70,386

$0.750

$0.450

$0.560

$0.450

Corphita

USA . 969 parts In-Stock

1+ parts

$0.792

100+ parts

-

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969

$0.792

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Aztec Data Supply Inc.

USA . 2,925 parts In-Stock

1+ parts

$1.301

100+ parts

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2,925

$1.301

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Microchip USA

USA . 8,556 parts In-Stock

1+ parts

$3.311

100+ parts

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8,556

$3.311

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Perfect Parts

USA . 91,840 parts In-Stock

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91,840

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QUARKTWIN TECHNOLOGY LTD

USA . 29,329 parts In-Stock

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29,329

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iodParts Technologies Inc.

India . 635 parts In-Stock

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635

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Overview

Unleash the power of innovation with the BDP950H6327XTSA1 by Infineon Technologies. Crafted with precision and expertise, this RF Power Bipolar Junction Transistor (BJT) offers unparalleled performance in amplifier applications. Its PNP polarity and single configuration make it a versatile choice for a range of projects. With a maximum collector-emitter voltage of 60V and a collector current of 3A, this transistor delivers reliable results every time. Trust in Infineon Technologies to provide top-quality components that elevate your designs to new heights. Experience the difference with the BDP950H6327XTSA1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material provides good insulation and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuit designs, making this transistor a versatile choice for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easier to use in a range of amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and reliability in amplification circuits.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on circuit boards, saving space and increasing efficiency.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact design, making it easier to integrate into tight spaces within electronic devices.

Terminal Form: GULL WING

The gull wing terminal form ensures secure connections, reducing the risk of disconnection or damage during operation.

No. of Terminals: 4

With 4 terminals, this transistor provides flexibility in circuit design and allows for more complex connections and functions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board while still offering high performance and reliability.

Maximum Collector-Emitter Voltage: 60 V

The high maximum voltage capacity allows for use in a wide range of applications, making this transistor a versatile choice.

Transistor Element Material: SILICON

The silicon transistor element material ensures high performance, stability, and durability in various operating conditions.

Maximum Collector Current (IC): 3 A

With a maximum current capacity of 3 A, this transistor can handle high-power amplification tasks with ease.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and resistance to oxidation, ensuring stable and reliable performance over time.

Terminal Position: DUAL

The dual terminal position allows for flexible connection options, making it easier to integrate into different circuit layouts.

Case Connection: COLLECTOR

The collector case connection provides a secure and stable connection point for external circuitry, ensuring reliable operation.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100 MHz ensures fast and efficient signal amplification, making this transistor ideal for high-frequency applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BDP950H6327XTSA1 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDP950H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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