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BDP948H6327XTSA1

Infineon Technologies

BDP948H6327XTSA1 by Infineon Technologies

Infineon's BDP948H6327XTSA1 is a PNP RF Power BJT with 45V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with gull wing terminals for surface mounting.

Median Price

$0.327

Lifecycle Status

EOL

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 33,000 parts In-Stock

1+ parts

-

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$0.313

33,000

-

-

-

$0.313

Chip1Stop

Japan . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.327

10k+ parts

$0.293

4,000

-

-

$0.327

$0.293

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.432

10k+ parts

$0.257

3,000

-

-

$0.432

$0.257

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.939

100+ parts

-

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100

$0.939

-

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Vyrian

USA . 5,827 parts In-Stock

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5,827

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-

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Schukat

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.488

1k+ parts

$0.337

10k+ parts

$0.324

3,000

-

$0.488

$0.337

$0.324

TME

Poland . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.356

10k+ parts

-

3,000

-

-

$0.356

-

NAC Semi

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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$1.190

10k+ parts

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1,000

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-

$1.190

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VNN

France . 906 parts In-Stock

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906

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Digiode

USA . 308 parts In-Stock

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308

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Distributors (Availability)

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Ampacity Inc.

Singapore . 13,546 parts In-Stock

1+ parts

$0.265

100+ parts

-

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13,546

$0.265

-

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Continental Prestige Electronics

USA . 4,255 parts In-Stock

1+ parts

$0.939

100+ parts

-

1k+ parts

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10k+ parts

$0.920

4,255

$0.939

-

-

$0.920

Argo Parts USA

USA . 1,765 parts In-Stock

1+ parts

$0.939

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1,765

$0.939

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Corohmni

South Africa . 466 parts In-Stock

1+ parts

$1.246

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466

$1.246

-

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Modulus Dynamics

Lithuania . 15,853 parts In-Stock

1+ parts

$1.584

100+ parts

$1.521

1k+ parts

$1.457

10k+ parts

-

15,853

$1.584

$1.521

$1.457

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Aztec Data Supply Inc.

USA . 155 parts In-Stock

1+ parts

$1.917

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155

$1.917

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Microchip USA

USA . 3,903 parts In-Stock

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$3.311

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3,903

$3.311

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AZTECH Wire

Italy . 1,199 parts In-Stock

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$22.210

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1,199

$22.210

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Perfect Parts

USA . 30,240 parts In-Stock

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30,240

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Eastek

USA . 1,000 parts In-Stock

1+ parts

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$0.551

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1,000

-

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$0.551

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Corphita

USA . 941 parts In-Stock

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941

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Glotronic Ltd.

UK . 800 parts In-Stock

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800

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Robosynatics

Brazil . 200 parts In-Stock

1+ parts

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100+ parts

$1.166

1k+ parts

$1.080

10k+ parts

$1.080

200

-

$1.166

$1.080

$1.080

Lucentia Tech

USA . 200 parts In-Stock

1+ parts

-

100+ parts

$1.166

1k+ parts

$1.080

10k+ parts

$1.080

200

-

$1.166

$1.080

$1.080

Overview

Upgrade your electronics with the BDP948H6327XTSA1 by Infineon Technologies, a top-of-the-line RF Power Bipolar Junction Transistor designed to deliver unmatched performance. Manufactured with precision and expertise, this PNP transistor is perfect for amplifier applications and comes in a convenient surface mount package. With a maximum collector-emitter voltage of 45V and a collector current of 3A, this transistor ensures reliable operation and optimal functionality. Trust in the quality and innovation of Infineon Technologies to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and resistance to environmental factors, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification and switching circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various amplifier setups.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides reliable performance and efficient amplification.

Surface Mount: YES

The surface mount feature allows for easy installation onto PCBs, saving space and making the manufacturing process more efficient.

Package Shape: RECTANGULAR

The rectangular shape provides a compact and space-saving design, making it suitable for applications where size is a constraint.

Terminal Form: GULL WING

The gull-wing terminal form facilitates easy soldering onto circuit boards, ensuring a secure and reliable connection.

No. of Terminals: 4

With 4 terminals, this transistor offers flexibility in circuit design and connectivity options.

Maximum Collector-Emitter Voltage: 45 V

The high maximum voltage rating allows for greater flexibility in circuit design and operation, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, ensuring stable operation over a range of temperatures and conditions.

Maximum Collector Current (IC): 3 A

With a high maximum collector current rating, this transistor can handle large currents, making it suitable for power amplification applications.

Terminal Finish: TIN

The tin terminal finish provides good solderability and corrosion resistance, ensuring a durable connection between the transistor and the PCB.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit layout and connectivity, allowing for easy integration into various amplifier designs.

Case Connection: COLLECTOR

The collector case connection simplifies circuit design and layout, ensuring a secure and reliable connection for the collector terminal.

Nominal Transition Frequency (fT): 100 MHz

With a high transition frequency, this transistor can deliver fast switching speeds and high-frequency performance, making it suitable for high-speed amplifier applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BDP948H6327XTSA1 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDP948H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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