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SD1731-14

STMicroelectronics

SD1731-14 by STMicroelectronics

SD1731-14 by STMicroelectronics is a NPN RF BJT with 257W power dissipation, 55V max collector-emitter voltage, and 20A max collector current. It is used in high-frequency band applications due to its single configuration and silicon transistor element material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,516 parts In-Stock

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Anansix

USA . 1,617 parts In-Stock

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Digiode

USA . 1,206 parts In-Stock

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1,206

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,361 parts In-Stock

1+ parts

$1.003

100+ parts

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$0.903

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1,361

$1.003

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$0.903

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MKK Technologies

India . 881 parts In-Stock

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$1.886

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881

$1.886

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DigiPath Technology Company

USA . 881 parts In-Stock

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$1.886

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881

$1.886

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Parana Technologies

USA . 1,460 parts In-Stock

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$1.199

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1,460

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$1.199

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Corphita

USA . 708 parts In-Stock

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708

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Overview

Elevate your RF power applications with the SD1731-14 from STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics is known for delivering top-notch quality and reliability. The SD1731-14 is a high-performance RF Power Bipolar Junction Transistor that offers exceptional value and benefits to customers. With a maximum power dissipation of 257 W and a maximum collector current of 20 A, this NPN transistor is perfect for high frequency band applications. Trust STMicroelectronics to provide you with the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides durability and protection against external elements, ensuring the longevity of the transistor.

Polarity or Channel Type: NPN

NPN transistor configuration allows for amplification of signals and is commonly used in most electronic applications.

Configuration: SINGLE

Single configuration simplifies circuit design and allows for easy integration into various electronic devices.

Highest Frequency Band: HIGH FREQUENCY BAND

High frequency band capability ensures efficient performance in high-speed applications such as telecommunications and radar systems.

Maximum Power Dissipation (Abs): 257 W

High maximum power dissipation rating allows for handling of high power levels, making it suitable for demanding applications.

Package Style: FLANGE MOUNT

Flange mount package style offers easy installation and secure mounting, providing stability in different operating conditions.

Minimum DC Current Gain (hFE): 5

Minimum DC current gain of 5 ensures stable amplification and reliable performance in various circuit configurations.

Maximum Operating Temperature: 200 °C

High maximum operating temperature of 200 °C allows for reliable operation in temperature-critical applications.

Maximum Collector-Emitter Voltage: 55 V

Maximum collector-emitter voltage of 55V provides a safe operating range and compatibility with a wide range of circuits.

Maximum Collector Current (IC): 20 A

High maximum collector current rating of 20A enables the transistor to handle high current loads without compromising performance.

Terminal Position: RADIAL

Radial terminal position facilitates easy connection and secure mounting, ensuring reliable electrical connections.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1731-14 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

55 V

Configuration:

Minimum DC Current Gain (hFE):

5

Highest Frequency Band:

HIGH FREQUENCY BAND

JESD-30 Code:

O-PRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Element Material:

SILICON

Trade Compliance

SD1731-14 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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