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2SC2510

Toshiba

2SC2510 by Toshiba

Toshiba's 2SC2510 is an NPN RF Power BJT with a single configuration for amplifier applications. It offers a min power gain of 12.2 dB, max power dissipation of 250 W, and operates in the high-frequency band up to 175°C.

Median Price

$127.250

Lifecycle Status

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< 1k

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American Microsemiconductor Inc.

USA . 9 parts In-Stock

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VNN

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Nova Conductors

Japan . 34 parts In-Stock

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Ampacity Inc.

Singapore . 1,645 parts In-Stock

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$34.050

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Continental Prestige Electronics

USA . 4,549 parts In-Stock

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Authorized Procurement Solutions

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Argo Parts USA

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Aranea Global

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Kepictronics

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Overview

Unleash the power of innovation with Toshiba's 2SC2510 RF Power Bipolar Junction Transistor. Designed for high-frequency amplifier applications, this NPN transistor boasts a minimum power gain of 12.2 dB and a maximum collector current of 20 A. With a package body material of ceramic and metal-sealed cofired, this transistor offers superior performance and durability. Whether you're looking to amplify signals or enhance your electronic projects, the 2SC2510 delivers unmatched quality and reliability. Elevate your designs and unlock new possibilities with Toshiba's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This package material provides excellent durability and protection, making the transistor suitable for high performance and long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, ensuring reliable amplification of signals.

Minimum Power Gain (Gp): 12.2 dB

With a minimum power gain of 12.2 dB, this transistor can amplify signals effectively, making it suitable for amplifier applications.

Maximum Power Dissipation (Abs): 250 W

The high maximum power dissipation of 250 W allows for robust performance under high power conditions, making it ideal for applications requiring high power handling.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can operate reliably in high-temperature environments without thermal issues.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SC2510 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

600 pF

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

250 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

12.2 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SC2510 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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