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2SC2879

Asi Semiconductor

2SC2879 by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 25 A;

Median Price

$49.300

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 6 parts In-Stock

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$49.300

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VNN

France . 2,108 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2 parts In-Stock

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Corohmni

South Africa . 169 parts In-Stock

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$1.278

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$1.794

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$1.794

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Ampacity Inc.

Singapore . 228 parts In-Stock

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$37.050

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Metaverse IC Inc.

Canada . 5,000 parts In-Stock

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Continental Prestige Electronics

USA . 3,264 parts In-Stock

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Argo Parts USA

USA . 2,953 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Assy Fe

Spain . 1 parts In-Stock

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SC2879 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC2879 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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