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AM81719-030

STMicroelectronics

AM81719-030 by STMicroelectronics

STMicroelectronics' AM81719-030 is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 6.7 dB and can handle up to 67 W of power dissipation. With a max operating temperature of 200 °C, it is suitable for L Band frequencies in flange mount packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,755 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,755

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-

-

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Vyrian

USA . 1,637 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,637

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Digiode

USA . 800 parts In-Stock

1+ parts

-

100+ parts

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800

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 412 parts In-Stock

1+ parts

$0.200

100+ parts

-

1k+ parts

-

10k+ parts

$0.192

412

$0.200

-

-

$0.192

Northwest PG Solutions

USA . 2,239 parts In-Stock

1+ parts

$0.220

100+ parts

-

1k+ parts

-

10k+ parts

$0.194

2,239

$0.220

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-

$0.194

IDEA Electronic Components Group

UK . 1,581 parts In-Stock

1+ parts

$1.557

100+ parts

-

1k+ parts

$1.401

10k+ parts

-

1,581

$1.557

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$1.401

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MKK Technologies

India . 1,326 parts In-Stock

1+ parts

$2.927

100+ parts

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10k+ parts

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1,326

$2.927

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DigiPath Technology Company

USA . 1,326 parts In-Stock

1+ parts

$2.927

100+ parts

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1,326

$2.927

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Corphita

USA . 2,209 parts In-Stock

1+ parts

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2,209

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Parana Technologies

USA . 1,317 parts In-Stock

1+ parts

-

100+ parts

$1.861

1k+ parts

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10k+ parts

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1,317

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$1.861

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Overview

Experience the superior performance of the AM81719-030 RF Power Bipolar Junction Transistor by STMicroelectronics. With a focus on quality and reliability, STMicroelectronics delivers cutting-edge technology in every product. Ideal for amplifier applications in the L band, this transistor offers a minimum power gain of 6.7 dB and a maximum power dissipation of 67 W. Its ceramic, metal-sealed package ensures durability while its NPN configuration provides ease of use. Upgrade your RF power applications with the AM81719-030 and enjoy enhanced efficiency and functionality.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides durability and reliability, making this product suitable for rugged environments.

Polarity or Channel Type: NPN

The NPN polarity or channel type allows for easy integration into existing NPN circuit designs, providing compatibility and convenience.

Configuration: SINGLE

The single configuration simplifies the circuit layout and reduces complexity, making this product easy to use for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this product delivers high performance and reliability in amplification tasks.

Minimum Power Gain (Gp): 6.7 dB

The minimum power gain of 6.7 dB ensures efficient signal amplification, making this product ideal for applications that require high gain.

Surface Mount: YES

Being surface mount compatible makes installation and assembly easier, offering flexibility in the design and manufacturing process.

Package Shape: SQUARE

The square package shape allows for efficient use of board space and easy mounting, contributing to a compact and sleek design.

Terminal Form: FLAT

The flat terminal form simplifies connection and ensures secure contact, facilitating easy installation and maintenance.

Highest Frequency Band: L BAND

Operating in the L band frequency range, this product is suitable for various RF applications within this band, ensuring versatile use.

No. of Terminals: 2

With only 2 terminals, this product offers simplicity in wiring and connection, reducing the risk of errors and enhancing reliability.

Maximum Power Dissipation (Abs): 67 W

With a maximum power dissipation of 67 W, this product can handle high power levels efficiently, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure mounting and easy integration, ensuring stability and reliability in various installations.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain of 15 ensures stable and consistent performance, making this product reliable in amplification tasks.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this product can withstand high temperatures, ensuring reliability in harsh environments.

Transistor Element Material: SILICON

Made from silicon, the transistor element material offers high performance and reliability, ensuring consistent operation in various applications.

Maximum Collector Current (IC): 2.67 A

With a maximum collector current of 2.67 A, this product can handle high current loads, making it suitable for demanding amplifier applications.

Terminal Position: DUAL

The dual terminal position offers flexibility in wiring and connection options, allowing for versatile use in different circuit configurations.

Case Connection: BASE

The base case connection ensures secure and stable mounting, enhancing the overall reliability and performance of this product.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM81719-030 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

S-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

SQUARE

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

6.7 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

AM81719-030 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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