Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STMicroelectronics AM81214-015 is an NPN BJT transistor with 8.6 dB min power gain, ideal for L Band applications. It has a max power dissipation of 37.5W and operates at temperatures up to 250 °C, suitable for switching purposes in RF circuits. The package style is flange mount with a dual terminal position for easy installation.
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This package material provides excellent heat dissipation and durability, ensuring reliability in various operating conditions.
NPN configuration allows for easy integration into circuits and offers high performance in switching applications.
Single configuration simplifies circuit design and enhances ease of use in applications where only one transistor is needed.
Designed specifically for switching applications, making it efficient and reliable in controlling currents in electronic circuits.
Surface mount capability enables easy and efficient PCB assembly for streamlined manufacturing processes.
Higher minimum power gain ensures signal amplification, making it suitable for applications requiring reliable signal boosting.
Rectangular package shape allows for compact and efficient placement on PCBs, optimizing space utilization.
Flat terminal form facilitates secure and stable connections, ensuring proper functionality and performance.
Designed for L Band frequencies, making it suitable for applications operating within this frequency range with enhanced performance.
Having 2 terminals simplifies connection and integration into circuits, enhancing usability and efficiency.
High maximum power dissipation capability ensures reliable operation under demanding conditions, making it suitable for high-power applications.
Flange mount package style offers easy and secure mounting on surfaces, enhancing stability and reliability in various applications.
Minimum DC current gain of 30 ensures efficient and reliable current amplification in circuits, improving overall performance.
With a maximum operating temperature of 250 °C, it can withstand high-temperature environments, ensuring operational stability and longevity.
Silicon transistor element material offers high performance and reliability, making it ideal for demanding applications.
Capable of handling a maximum collector current of 1.8 A, suitable for applications requiring high current switching capabilities.
Dual terminal position allows for easy and secure connections, ensuring proper functionality and performance in circuits.
Base case connection enhances stability and reliability in circuit connections, ensuring consistent performance in various applications.
RF Power Bipolar Junction Transistors (BJT) AM81214-015 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Minimum Power Gain (Gp):
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Sub-Category:
Surface Mount:
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Transistor Application:
Transistor Element Material:
AM81214-015 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
2N2222A
International Devices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM358N
Silicon Group
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
SMBJ18CA
Synsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Rectron
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;
1N4148
Rochester Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
RC0805FR-0710RL
Yageo
Yageo's RC0805FR-0710RL is a 10 ohm SMT fixed resistor with 1% tolerance and 0.125 W power dissipation. With a temperature range of -55 to 155 °C, it suits applications requiring precise resistance values in compact surface mount designs.
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
USB3320C-EZK-TR
Standard Microsystems
INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;
Comset Semiconductors
Fairchild Semiconductor
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
Onsemi
DS18B20Z/T&R
Maxim Integrated
DS18B20Z/T&R by Maxim Integrated is a 12-bit digital temperature sensor with a max supply voltage of 5.5V and an accuracy of 0.50°C. It features a 1-Wire interface, operates b/w -55°C to 125°C, and is ideal for applications requiring precise temperature monitoring in compact spaces.
Baneasa S A
LM317T
Micro Commercial Components
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Moisture Sensitivity Level (MSL): 1; Maximum Output Current-1: 1.5 A; Operating Temperature (TJ-Min): 0 Cel;
General Diode
MBRS1100T3G
MBRS1100T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.75V. It operates in temperatures ranging from -65 to 175°C, making it suitable for power applications. With a reverse test voltage of 100V, this diode is ideal for high-power circuits requiring efficient rectification.
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LIS3DHTR
STMicroelectronics
LIS3DHTR by STMicroelectronics is a 16-terminal accelerometer with output range of 0.18-1.62V, ideal for motion sensing applications. Operating temperature ranges from -40 to 85°C, making it suitable for various environments. With a compact square package body of 3x3mm and digital voltage output type, it is commonly used in surface mount designs.
BAV99
Sprague Electric
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;
MRF858S
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Minimum Power Gain (Gp): 11 dB; Terminal Form: FLAT;
NE69039
Renesas Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .3 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 6 V;
LV1721E50R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR;
AT-64020
Broadcom
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; JESD-609 Code: e4; Highest Frequency Band: S BAND;
3005
Microchip Technology
The Microchip Technology 3005 is an NPN RF Power BJT transistor with a max collector current of 2.5A, suitable for amplifier applications in the S Band frequency range. It features a ceramic-metal-sealed cofired package body material, flat terminal form, and dual terminal position for surface mount installation at temperatures up to 200°C.
1720-2
Advanced Power Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-CDFM-F2; Terminal Position: DUAL;
BLY87C
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 950 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 1.5 A;
MSC81058
STMicroelectronics' MSC81058 is a NPN RF BJT with 29W power dissipation, ideal for L Band applications. Featuring single configuration, it has 1A max collector current and 10pF collector-base capacitance. Suitable for amplifier circuits, this transistor operates up to 200 °C in a ceramic-metal package.
BLW32
The NXP Semiconductors BLW32 is an NPN RF Power BJT with a single configuration, ideal for amplifier applications in the UHF band. It offers a min power gain of 11 dB, max collector-emitter voltage of 30V, and can handle up to 10.8W power dissipation at 200°C.
ISL73096EHVF
NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MSC83305
STMicroelectronics' MSC83305 is a NPN RF BJT with 17.6W power dissipation, hFE of 30, and 0.7A collector current. Ideal for S Band applications like amplifiers due to its ceramic-metal package and high operating temperature of 200 °C.
MX0912B251Y
NXP Semiconductors' MX0912B251Y is an NPN RF Power BJT with 7 dB min power gain, suitable for L Band applications. It has a max power dissipation of 690 W and can operate at temperatures up to 200°C. The transistor is designed for amplifier configurations and features a flange mount package style.
RZ2731B32W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.8 A; Terminal Form: FLAT; No. of Elements: 1;
AM0608-200
STMicroelectronics' AM0608-200 is an NPN RF BJT with 8.7 dB min power gain, ideal for amplifier applications in the ultra-high frequency band. With a max power dissipation of 875 W and operating temperature up to 250 °C, it features a ceramic-metal-sealed co-fired package body and dual terminal position for efficient performance.
LLE18040XL
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-CDFM-F2; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;
RZ3135B14W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.4 A; JESD-30 Code: R-CDFM-F2; Package Shape: RECTANGULAR;
2SA1537D
Onsemi's 2SA1537D is a PNP RF BJT with max. Vce of 70V and Ic of 0.5A, ideal for switching applications at 700MHz. It features a plastic/epoxy body, single configuration, and through-hole terminals in a rectangular package style.
MRF13750H
RF Power Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
PTB32001X
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4.2 W; Maximum Collector Current (IC): .25 A; Additional Features: HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS;
AM0912-080
STMicroelectronics' AM0912-080 is a NPN RF BJT transistor with 8.4 dB min power gain, ideal for L Band applications. It has a max power dissipation of 220 W and can handle up to 7 A collector current, suitable for high-power switching operations in various electronic devices.
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AM81214-006
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16.7 W; Maximum Collector Current (IC): .82 A; Minimum DC Current Gain (hFE): 15;
AM81214-030
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Maximum Collector Current (IC): 2.75 A; Minimum DC Current Gain (hFE): 15;
AM81214-060
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Collector Current (IC): 5 A; Case Connection: BASE;
AM81214-6
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16.7 W; Maximum Collector Current (IC): .82 A; Qualification: Not Qualified;
AM81416-020
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2.8 A; Transistor Application: AMPLIFIER;
AM81719-030
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 67 W; Maximum Collector Current (IC): 2.67 A; Package Shape: SQUARE;
AM81719-040
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79.5 W; Maximum Collector Current (IC): 4.8 A; No. of Elements: 1;
AM81720-012
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.8 W; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): FLANGE MOUNT;
AM81214-015
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1400 MHz; Maximum Power Dissipation (Abs): 37.5 W; Maximum Collector Current (IC): 1.8 A;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.75 A; Package Style (Meter): FLANGE MOUNT; Qualification: Not Qualified;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F2;
AM81214-300
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Collector Current (IC): 18.75 A; JESD-30 Code: R-CDFM-F2;
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