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AM81214-015

STMicroelectronics

AM81214-015 by STMicroelectronics

STMicroelectronics AM81214-015 is an NPN BJT transistor with 8.6 dB min power gain, ideal for L Band applications. It has a max power dissipation of 37.5W and operates at temperatures up to 250 °C, suitable for switching purposes in RF circuits. The package style is flange mount with a dual terminal position for easy installation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,805 parts In-Stock

1+ parts

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3,805

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Anansix

USA . 2,732 parts In-Stock

1+ parts

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2,732

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Vyrian

USA . 100 parts In-Stock

1+ parts

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 311 parts In-Stock

1+ parts

$0.470

100+ parts

-

1k+ parts

-

10k+ parts

$0.451

311

$0.470

-

-

$0.451

Northwest PG Solutions

USA . 1,684 parts In-Stock

1+ parts

$0.517

100+ parts

-

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-

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$0.456

1,684

$0.517

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$0.456

IDEA Electronic Components Group

UK . 1,861 parts In-Stock

1+ parts

$0.819

100+ parts

-

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$0.737

10k+ parts

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1,861

$0.819

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$0.737

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MKK Technologies

India . 2,180 parts In-Stock

1+ parts

$1.540

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2,180

$1.540

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DigiPath Technology Company

USA . 2,180 parts In-Stock

1+ parts

$1.540

100+ parts

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2,180

$1.540

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Corphita

USA . 2,029 parts In-Stock

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2,029

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Parana Technologies

USA . 1,865 parts In-Stock

1+ parts

-

100+ parts

$0.979

1k+ parts

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1,865

-

$0.979

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Overview

Unlock the power of RF applications with the AM81214-015 by STMicroelectronics. Crafted with precision and expertise, this RF Power BJT offers exceptional performance and reliability. Ideal for switching applications in the L Band, this transistor boasts a minimum power gain of 8.6 dB and a maximum power dissipation of 37.5W. With a single configuration and NPN polarity, this transistor is designed for seamless integration. Experience top-tier quality and unmatched functionality with the AM81214-015 - the perfect choice for your RF power needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This package material provides excellent heat dissipation and durability, ensuring reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into circuits and offers high performance in switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and enhances ease of use in applications where only one transistor is needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it efficient and reliable in controlling currents in electronic circuits.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly for streamlined manufacturing processes.

Minimum Power Gain (Gp): 8.6 dB

Higher minimum power gain ensures signal amplification, making it suitable for applications requiring reliable signal boosting.

Package Shape: RECTANGULAR

Rectangular package shape allows for compact and efficient placement on PCBs, optimizing space utilization.

Terminal Form: FLAT

Flat terminal form facilitates secure and stable connections, ensuring proper functionality and performance.

Highest Frequency Band: L BAND

Designed for L Band frequencies, making it suitable for applications operating within this frequency range with enhanced performance.

No. of Terminals: 2

Having 2 terminals simplifies connection and integration into circuits, enhancing usability and efficiency.

Maximum Power Dissipation (Abs): 37.5 W

High maximum power dissipation capability ensures reliable operation under demanding conditions, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy and secure mounting on surfaces, enhancing stability and reliability in various applications.

Minimum DC Current Gain (hFE): 30

Minimum DC current gain of 30 ensures efficient and reliable current amplification in circuits, improving overall performance.

Maximum Operating Temperature: 250 °C

With a maximum operating temperature of 250 °C, it can withstand high-temperature environments, ensuring operational stability and longevity.

Transistor Element Material: SILICON

Silicon transistor element material offers high performance and reliability, making it ideal for demanding applications.

Maximum Collector Current (IC): 1.8 A

Capable of handling a maximum collector current of 1.8 A, suitable for applications requiring high current switching capabilities.

Terminal Position: DUAL

Dual terminal position allows for easy and secure connections, ensuring proper functionality and performance in circuits.

Case Connection: BASE

Base case connection enhances stability and reliability in circuit connections, ensuring consistent performance in various applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM81214-015 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

250 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

8.6 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AM81214-015 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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