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BLU60/28

NXP Semiconductors

BLU60/28 by NXP Semiconductors

BLU60/28 by NXP Semiconductors is a high-performance NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 110W, operates up to 200 °C, and offers a min power gain of 7dB in the ultra-high frequency band. Its ceramic, metal-sealed package ensures reliability in demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 3,758 parts In-Stock

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Digiode

USA . 1,451 parts In-Stock

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Anansix

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Corel Iberica Componentes, S.L.

Spain . 3 parts In-Stock

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One Stop Electronics

USA . 1,349 parts In-Stock

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$57.050

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$57.050

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UNI Independent Distributors

Spain . 6,165 parts In-Stock

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Corphita

USA . 2,886 parts In-Stock

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Northwest PG Solutions

USA . 991 parts In-Stock

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Native Components

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Assy Fe

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Overview

Elevate your RF applications with the BLU60/28 from NXP Semiconductors, a pinnacle of reliability and performance in RF Power BJTs. Crafted with precision in a robust ceramic and metal-sealed package, this single NPN transistor delivers exceptional power gain and efficiency, ensuring seamless amplification even in ultra-high frequency settings. Trust NXP's legacy of innovation to empower your designs, providing unmatched quality and long-lasting results that drive success.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic, metal-sealed co-fired package enhances durability and thermal performance, making it ideal for high-power applications.

Polarity or Channel Type: NPN

NPN configuration is widely used, providing versatility for various amplification tasks in RF applications.

Configuration: SINGLE

A single configuration allows for straightforward integration in circuits, ensuring easier design and simplicity.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is optimized for high efficiency and performance in RF applications.

Surface Mount: YES

Surface mount capability facilitates compact designs and smoother manufacturing processes, allowing for space-saving circuit layouts.

Minimum Power Gain (Gp): 7 dB

A minimum power gain of 7 dB guarantees effective signal amplification, enhancing the overall performance of RF systems.

Package Shape: ROUND

The round package shape provides a robust design that improves thermal management and minimizes physical stress on the transistor.

Terminal Form: FLAT

Flat terminals offer better soldering surface area, ensuring reliable connections and ease of assembly.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for the ultra-high frequency band, this transistor excels in applications requiring high-speed signal processing.

No. of Terminals: 6

With six terminals, the transistor supports complex circuit designs, providing flexibility in configuration and functionality.

Maximum Power Dissipation (Abs): 110 W

A maximum power dissipation of 110 W enables the transistor to handle significant power loads without overheating, ensuring reliability.

Package Style (Meter): FLANGE MOUNT

Flange mount style improves thermal contact and stability in applications, making it suitable for robust environments.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 provides ample amplification capabilities, reinforcing its performance in various applications.

Maximum Operating Temperature: 200 °C

High operating temperature capability (200 °C) ensures reliability and performance in demanding thermal conditions.

Maximum Collector-Emitter Voltage: 32 V

A maximum collector-emitter voltage of 32 V allows operation in moderate voltage applications, providing design flexibility.

Transistor Element Material: SILICON

Silicon construction offers excellent electronic properties, ensuring reliable performance and longevity in various applications.

Maximum Collector Current (IC): 8 A

With a maximum collector current of 8 A, the transistor supports high-power applications, adding to its versatility and robustness.

Case Connection: ISOLATED

Isolated case connection enhances safety by minimizing the risk of short circuits, making it safer for operation in varied environments.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLU60/28 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-CXFM-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

7 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

UNSPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLU60/28 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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