Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MS2209 by Microsemi is a NPN BJT transistor with 7A IC, suitable for L Band applications. It has a ceramic-metal-sealed co-fired package and operates at max temp of 200°C. Ideal for amplifier circuits due to its single configuration and square package shape.
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Aranea Global
The ceramic package body provides excellent thermal conductivity and high reliability, making this transistor suitable for high-power applications.
The NPN configuration allows for amplification of signals with high efficiency and low noise, making this transistor ideal for amplifier circuits.
The single configuration simplifies circuit design and assembly, reducing potential points of failure and improving overall performance.
Specifically designed for amplifier applications, this transistor offers high gain and power handling capabilities for optimal signal amplification.
The surface mount capability provides ease of integration into circuit boards, saving space and simplifying manufacturing processes.
The square package shape ensures efficient use of board space and facilitates easier mounting onto circuit boards.
The flat terminal form allows for easy soldering and secure connections, ensuring stable performance in demanding environments.
Optimized for L Band frequencies, this transistor is ideal for applications requiring high-speed signal processing and communication capabilities.
With only 2 terminals, this transistor is simple to install and operate, reducing the risk of errors during assembly.
The flange mount package style provides mechanical stability and secure mounting options, making this transistor suitable for rugged environments.
With a high maximum operating temperature of 200°C, this transistor can withstand elevated temperatures without compromising performance.
The use of silicon as the transistor element material ensures high reliability, durability, and performance consistency over a wide range of operating conditions.
With a high maximum collector current rating of 7 A, this transistor can handle high power levels without overheating or damage.
The tin lead terminal finish provides excellent solderability and corrosion resistance, ensuring long-term reliability and stable electrical connections.
The dual terminal position allows for versatile installation options and compatibility with a wide range of circuit designs.
The base case connection simplifies circuit design and layout, enabling easy integration into existing systems.
RF Power Bipolar Junction Transistors (BJT) MS2209 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Microsemi
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MS2209 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-01-589-0428, 5961015890428
NIIN
015890428
Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.
2N7002
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
1N4148W-7-F
Diodes Incorporated
1N4148W-7-F by Diodes Inc. is a single rectifier diode with 0.715V max forward voltage and 100V max reverse voltage. Ideal for applications requiring fast switching speeds, it has a small outline package style and matte tin terminal finish, making it suitable for surface mount PCB designs.
LM358MX
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
Positronic Industries
CONNECTOR ACCESSORY; MIL-Connector Accessory Name: CONTACT; DIN Conformity: NO; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354; Contact Type: CRIMP REAR RELEASE;
SMBJ18CA
Telefunken Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
1N4148
Central Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
L7805CV
STMicroelectronics
L7805CV by STMicroelectronics is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation in electronic circuits.
FDN5618P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
Kec
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Non Repetitive Peak Forward Current: 2 A; Config: SINGLE; Maximum Operating Temperature: 200 Cel;
EU2B-YS303C
Idec
ROTARY SWITCH;
1N4148WT
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Vishay Intertechnology
Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.
LFXTAL025159REEL
Iqd Frequency Products
LFXTAL025159REEL by IQD Frequency Products is a 32.768 kHz crystal oscillator with 20 ppm frequency tolerance and 40,000 ohm series resistance. It is ideal for applications requiring precise timekeeping, such as real-time clocks in IoT devices or microcontrollers in wearables. The surface-mount design with a drive level of 1 uW makes it suitable for compact electronic systems.
1N4148WS
Taitron Components
LM107H
Linear Technology
LM107H by Linear Technology is an Operational Amplifier with a max input offset voltage of 3000uV, common mode reject ratio of 96dB, and min voltage gain of 50000. It is used in military applications due to its MILITARY temperature grade and BIPOLAR technology for precise signal processing in harsh environments.
Leshan Radio
BSS138K-13
BSS138K-13 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, operating in enhancement mode. With 3 terminals and 0.31A max drain current, it offers high performance in small outline package style.
CGA3E2X7R1H104K080AA
TDK
CGA3E2X7R1H104K080AA by TDK is a fixed ceramic capacitor with a capacitance of 0.1 uF and a rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate at temperatures ranging from -55 to 125 °C. This capacitor is commonly used in surface mount applications for various electronic devices.
BLV62
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12.5 A; Package Shape: RECTANGULAR; Package Body Material: METAL;
BFT98
Infineon Technologies
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3300 MHz; Maximum Power Dissipation (Abs): 2.2 W; Maximum Collector Current (IC): .2 A;
PZ1418B30U
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Collector Current (IC): 4 A; Case Connection: BASE;
MRF898
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 10 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MAX2602E/D
Maxim Integrated
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Qualification: Not Qualified; Moisture Sensitivity Level (MSL): 3;
SD1449
SD1449 by STMicroelectronics is a NPN RF BJT with 4 terminals, operating in the ultra-high frequency band. It has a max power dissipation of 19.4W and can handle a collector-emitter voltage of 25V. Ideal for amplifier applications due to its high-frequency capabilities and silicon element material.
LLE16045X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): .5 A; Minimum Power Gain (Gp): 8.5 dB;
SD1463
SD1463 by STMicroelectronics is an NPN RF Power BJT with 30V VCE, 15A IC, and ultra-high frequency band. It is a single-configured transistor for amplifier applications in a plastic/epoxy package suitable for surface mount with 8 terminals.
SD1732
SD1732 by STMicroelectronics is a NPN RF BJT with 2 elements, suitable for amplifier applications in the UHF band. It has a max power dissipation of 65W, max collector-emitter voltage of 25V, and operates up to 200 °C. This transistor comes in a plastic package with flat terminals and nickel finish.
RX1214B170W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 15 A; Qualification: Not Qualified;
AM80814-005
STMicroelectronics' AM80814-005 is a NPN RF BJT transistor with 8.5 dB min power gain, suitable for L Band applications. It has a max power dissipation of 23 W and operates at temperatures up to 250 °C, making it ideal for high-power switching in various electronic devices.
SD1732(TDS595)
The SD1732 (TDS595) by STMicroelectronics is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 2.6 A, operates up to 200 °C, and supports ultra-high frequency bands. Its flat terminal design allows for easy surface mounting in compact setups.
MRF422
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Terminal Position: RADIAL; Highest Frequency Band: HIGH FREQUENCY BAND;
LUE2003S
LUE2003S by NXP is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 1.4 W, operates up to 200 °C, and supports S band frequencies. Its compact round ceramic package ensures efficient surface mounting.
BLV935
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 4 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MRB11175Y
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 12 A; Terminal Position: DUAL;
PH1214-110M
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 10 A; No. of Terminals: 2;
2SC2099
Toshiba
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 6 A;
BLV859
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 145 W; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 28 V;
MSC82304
STMicroelectronics' MSC82304 is a NPN RF BJT with 11.5W power dissipation, hFE of 30, and 0.6A collector current. Ideal for S Band applications like amplifiers due to its ceramic-metal package and high operating temperature of 200 °C.
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MS2209
Advanced Power Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 7 A; Terminal Form: FLAT; Transistor Element Material: SILICON;
MS2211
Microsemi
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Maximum Collector Current (IC): .9 A; No. of Elements: 1;
MS2272
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 24 A; Terminal Position: DUAL; Package Shape: RECTANGULAR;
MS2229
NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F2;
MS2201
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): .25 A; Transistor Element Material: SILICON;
MS2208
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1360 W; Maximum Collector Current (IC): 27 A; Transistor Application: AMPLIFIER;
MS2284
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 20;
MS2207
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 24 A; JESD-30 Code: R-CDFM-F2; Package Style (Meter): FLANGE MOUNT;
MS2215
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 16.5 A; JESD-30 Code: R-CDFM-F2; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MS2222
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.5 W; Maximum Collector Current (IC): 1.8 A; Peak Reflow Temperature (C): NOT SPECIFIED;
MS2217
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.75 A; Terminal Position: DUAL; Case Connection: BASE;
MS2200
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1167 W; Maximum Collector Current (IC): 43.2 A; Additional Features: HIGH RELIABILITY;
MS2214
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 8 A; Terminal Form: FLAT; Package Shape: SQUARE;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .9 A; Additional Features: HIGH RELIABILITY; Qualification: Not Qualified;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 27 A; Package Style (Meter): FLANGE MOUNT; Terminal Position: DUAL;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .25 A; Transistor Application: AMPLIFIER; Case Connection: BASE;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 43.2 A; Terminal Finish: TIN LEAD; Package Style (Meter): FLANGE MOUNT;
MS2202
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): .25 A; Terminal Finish: TIN LEAD;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 880 W; Maximum Collector Current (IC): 24 A; Terminal Position: DUAL;
MS2267
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 575 W; Maximum Collector Current (IC): 20 A; JESD-609 Code: e0;
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