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MS2209

Microsemi

MS2209 by Microsemi

MS2209 by Microsemi is a NPN BJT transistor with 7A IC, suitable for L Band applications. It has a ceramic-metal-sealed co-fired package and operates at max temp of 200°C. Ideal for amplifier circuits due to its single configuration and square package shape.

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Vyrian

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610

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Nova Conductors

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Aztec Data Supply Inc.

USA . 175 parts In-Stock

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Corohmni

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AZTECH Wire

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Argo Parts USA

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Overview

Experience unparalleled performance with the MS2209 RF Power Bipolar Junction Transistor by Microsemi. Known for their exceptional quality and reliability, Microsemi delivers cutting-edge technology in every product. The MS2209 is ideal for amplifier applications in the L band, offering a single configuration with a maximum collector current of 7A. With a ceramic, metal-sealed co-fired package body material and a flange mount package style, this transistor provides customers with unmatched value and performance. Upgrade your system today with the MS2209 and unleash the full potential of your RF applications.

Feature Benefit Bullets

Package Body Material: CERAMIC

The ceramic package body provides excellent thermal conductivity and high reliability, making this transistor suitable for high-power applications.

Polarity or Channel Type: NPN

The NPN configuration allows for amplification of signals with high efficiency and low noise, making this transistor ideal for amplifier circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and assembly, reducing potential points of failure and improving overall performance.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, this transistor offers high gain and power handling capabilities for optimal signal amplification.

Surface Mount: YES

The surface mount capability provides ease of integration into circuit boards, saving space and simplifying manufacturing processes.

Package Shape: SQUARE

The square package shape ensures efficient use of board space and facilitates easier mounting onto circuit boards.

Terminal Form: FLAT

The flat terminal form allows for easy soldering and secure connections, ensuring stable performance in demanding environments.

Highest Frequency Band: L BAND

Optimized for L Band frequencies, this transistor is ideal for applications requiring high-speed signal processing and communication capabilities.

No. of Terminals: 2

With only 2 terminals, this transistor is simple to install and operate, reducing the risk of errors during assembly.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides mechanical stability and secure mounting options, making this transistor suitable for rugged environments.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature of 200°C, this transistor can withstand elevated temperatures without compromising performance.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high reliability, durability, and performance consistency over a wide range of operating conditions.

Maximum Collector Current (IC): 7 A

With a high maximum collector current rating of 7 A, this transistor can handle high power levels without overheating or damage.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides excellent solderability and corrosion resistance, ensuring long-term reliability and stable electrical connections.

Terminal Position: DUAL

The dual terminal position allows for versatile installation options and compatibility with a wide range of circuit designs.

Case Connection: BASE

The base case connection simplifies circuit design and layout, enabling easy integration into existing systems.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MS2209 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Microsemi

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

7 A

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

S-CDFM-F2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

SQUARE

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MS2209 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-589-0428, 5961015890428

NIIN

015890428

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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