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AM1416-220

STMicroelectronics

AM1416-220 by STMicroelectronics

STMicroelectronics AM1416-220 is an NPN RF BJT transistor for amplifier applications. It operates in L Band with a highest frequency band. The package is ceramic-metal-sealed cofired, surface mountable, and has 2 terminals in a rectangular shape suitable for flange mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,710 parts In-Stock

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3,710

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Anansix

USA . 1,048 parts In-Stock

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1,048

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Vyrian

USA . 237 parts In-Stock

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237

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Distributors (Availability)

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Native Components

USA . 129 parts In-Stock

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$0.533

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129

$0.533

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Northwest PG Solutions

USA . 266 parts In-Stock

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$0.586

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266

$0.586

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IDEA Electronic Components Group

UK . 2,108 parts In-Stock

1+ parts

$1.538

100+ parts

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$1.384

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2,108

$1.538

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$1.384

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MKK Technologies

India . 485 parts In-Stock

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$2.893

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485

$2.893

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DigiPath Technology Company

USA . 485 parts In-Stock

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$2.893

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485

$2.893

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Corphita

USA . 2,453 parts In-Stock

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2,453

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Parana Technologies

USA . 630 parts In-Stock

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$1.839

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630

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$1.839

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Overview

Experience unparalleled performance with the AM1416-220 by STMicroelectronics, a top-quality RF Power Bipolar Junction Transistor that guarantees exceptional reliability and efficiency. Perfect for amplifier applications in the L Band frequency range, this transistor boasts a ceramic, metal-sealed package for optimal durability. With its NPN polarity and surface mount capability, the AM1416-220 offers unmatched value and benefits to customers seeking superior performance in their electronic designs. Elevate your projects with the trusted quality of STMicroelectronics.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides high durability and reliability, making this transistor ideal for long-term use in various applications.

Polarity or Channel Type: NPN

The NPN polarity or channel type allows for easy integration into existing NPN amplifier circuits, enhancing compatibility and ease of use.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor ensures optimal performance and signal amplification capabilities.

Surface Mount: YES

The surface mount capability facilitates easy and efficient PCB assembly, saving time and effort during manufacturing processes.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact design, enabling space-saving integration into electronic devices and systems.

Terminal Form: FLAT

The flat terminal form provides a stable and secure connection, minimizing the risk of disconnection or signal loss during operation.

Highest Frequency Band: L BAND

With support for the L Band frequency range, this transistor is suitable for high-frequency applications such as communication systems and radar systems.

No. of Terminals: 2

The two-terminal configuration simplifies installation and reduces potential points of failure, enhancing overall reliability and performance.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure and stable mounting options, ensuring proper heat dissipation and mechanical strength.

Transistor Element Material: SILICON

The silicon transistor element material provides excellent electrical properties and reliability, ensuring consistent performance over extended periods.

Terminal Position: DUAL

The dual terminal position supports versatile connection options, allowing for flexibility in circuit design and implementation.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM1416-220 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Terminals:

2

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

AM1416-220 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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