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AM80610-030

STMicroelectronics

AM80610-030 by STMicroelectronics

AM80610-030 by STMicroelectronics is an NPN RF power BJT designed for switching applications. It features a max power dissipation of 57W, operates at ultra-high frequencies, and withstands temperatures up to 200 °C. Ideal for high-performance electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,454 parts In-Stock

1+ parts

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3,454

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Anansix

USA . 2,541 parts In-Stock

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2,541

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Vyrian

USA . 201 parts In-Stock

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201

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,936 parts In-Stock

1+ parts

$1.475

100+ parts

-

1k+ parts

$1.327

10k+ parts

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1,936

$1.475

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$1.327

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MKK Technologies

India . 1,296 parts In-Stock

1+ parts

$2.773

100+ parts

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1,296

$2.773

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DigiPath Technology Company

USA . 1,296 parts In-Stock

1+ parts

$2.773

100+ parts

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1,296

$2.773

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Corphita

USA . 2,451 parts In-Stock

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2,451

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Parana Technologies

USA . 1,341 parts In-Stock

1+ parts

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100+ parts

$1.763

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1,341

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$1.763

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Native Components

USA . 445 parts In-Stock

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445

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Northwest PG Solutions

USA . 39 parts In-Stock

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39

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Overview

Unlock unparalleled performance with the AM80610-030 from STMicroelectronics, a leader in semiconductor innovation. This robust NPN RF power transistor excels in ultra-high frequency applications, offering reliable switching capabilities and impressive power dissipation for your designs. With superior thermal management and a compact ceramic-metal sealed package, it ensures longevity and efficiency. Elevate your projects with trusted quality that only STMicroelectronics can deliver!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package offers exceptional thermal stability and durability, making it suitable for high-performance applications.

Polarity or Channel Type: NPN

Being an NPN transistor allows for versatile use in a variety of switching and amplification applications, as it is widely compatible with other circuit elements.

Configuration: SINGLE

Single configuration helps to simplify circuit design, making it easy to implement in various applications without unnecessary complexity.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor can efficiently control high power loads, enhancing the performance of power management systems.

Surface Mount: YES

Surface mount capability allows for compact design and ease of integration into modern printed circuit boards, saving valuable space.

Package Shape: RECTANGULAR

The rectangular package shape provides a footprint that is compatible with various PCB layouts, facilitating easier assembly and soldering.

Terminal Form: FLAT

Flat terminal form ensures a reliable electrical connection and enhances thermal performance by maximizing contact with the PCB.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed to operate effectively in the ultra high frequency band, this transistor is suitable for RF applications, enabling high-speed data transmission.

No. of Terminals: 2

The two-terminal design simplifies connections and reduces the number of components required in the circuit, minimizing potential points of failure.

Maximum Power Dissipation (Abs): 57 W

With a maximum power dissipation of 57 W, this BJT can handle substantial power levels, making it ideal for high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style enhances mechanical stability and provides reliable mounting options in demanding environments.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures sufficient amplification for various applications, contributing to efficient operation.

Maximum Operating Temperature: 200 °C

Operating at a maximum temperature of 200 °C allows this transistor to function in extreme conditions without risk of thermal failure.

Transistor Element Material: SILICON

Using silicon as the element material ensures reliability, efficiency, and a long lifespan in electronic applications.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3 A allows the transistor to control substantial loads, making it suitable for high-current applications.

Terminal Position: DUAL

Dual terminal position enhances versatility in circuit design, making it easier to integrate with various components in different configurations.

Case Connection: BASE

Base connection facilitates reliable biasing and amplifies the transistor’s performance, essential for switching applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM80610-030 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AM80610-030 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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