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AM80912-030

STMicroelectronics

AM80912-030 by STMicroelectronics

STMicroelectronics AM80912-030 is an NPN BJT transistor with 7.8 dB min power gain, ideal for L Band applications. It has a max power dissipation of 75 W and can handle up to 3.5 A collector current. Suitable for switching purposes in high-frequency circuits due to its ceramic-metal package and flat terminal form.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,957 parts In-Stock

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3,957

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Anansix

USA . 198 parts In-Stock

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198

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Digiode

USA . 177 parts In-Stock

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177

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Distributors (Availability)

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Native Components

USA . 602 parts In-Stock

1+ parts

$0.473

100+ parts

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$0.454

602

$0.473

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$0.454

Northwest PG Solutions

USA . 234 parts In-Stock

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$0.520

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$0.459

234

$0.520

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$0.459

IDEA Electronic Components Group

UK . 1,303 parts In-Stock

1+ parts

$0.960

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$0.864

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1,303

$0.960

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$0.864

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MKK Technologies

India . 422 parts In-Stock

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$1.806

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422

$1.806

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DigiPath Technology Company

USA . 422 parts In-Stock

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$1.806

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422

$1.806

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Parana Technologies

USA . 2,233 parts In-Stock

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$1.148

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2,233

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$1.148

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Corphita

USA . 2,168 parts In-Stock

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2,168

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Overview

Experience superior performance and reliability with the AM80912-030 RF Power Bipolar Junction Transistor by STMicroelectronics. As a trusted manufacturer in the industry, STMicroelectronics delivers top-quality components for switching applications in the L Band frequency range. With a minimum power gain of 7.8 dB and maximum power dissipation of 75 W, this NPN transistor offers exceptional value and efficiency to customers. Upgrade your electronic designs with the AM80912-030 for seamless integration and optimal performance.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides high reliability and durability, making the transistor suitable for harsh operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, providing good performance and versatility.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in a variety of applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient switching operations.

Surface Mount: YES

Surface mount capability allows for easy and convenient PCB assembly, saving time and effort during production.

Minimum Power Gain (Gp): 7.8 dB

With a minimum power gain of 7.8 dB, this transistor provides good amplification capability for signal processing.

Package Shape: SQUARE

Square package shape allows for efficient use of space on the PCB, enabling compact and space-saving designs.

Terminal Form: FLAT

Flat terminal form enables easy mounting and soldering, ensuring secure connections and reliable performance.

Highest Frequency Band: L BAND

Operating in the L band frequency range, this transistor offers high-frequency performance suitable for various communication and RF applications.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and reduces the chance of errors during installation.

Maximum Power Dissipation (Abs): 75 W

Higher power dissipation capability of 75W enables the transistor to handle high power levels without overheating or damage.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and easy mounting, ensuring secure attachment to the PCB or heat sink.

Minimum DC Current Gain (hFE): 15

Having a minimum DC current gain of 15 ensures consistent and stable amplification performance in various operating conditions.

Maximum Operating Temperature: 250 °C

With a maximum operating temperature of 250 °C, this transistor can withstand high-temperature environments without performance degradation.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency, making them ideal for a wide range of applications.

Maximum Collector Current (IC): 3.5 A

Being able to handle a maximum collector current of 3.5 A makes this transistor suitable for high-power applications that require significant current flow.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and connection options, allowing for versatile applications.

Case Connection: BASE

Base case connection simplifies the wiring and integration process, ensuring easy installation and reliable electrical connections.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM80912-030 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

S-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

250 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

SQUARE

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

7.8 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AM80912-030 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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