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2SC2510A

Toshiba

2SC2510A by Toshiba

Toshiba's 2SC2510A is an NPN RF BJT with a max. collector current of 20A and max. power dissipation of 250W, ideal for high-frequency amplifier applications. It features a ceramic-metal-sealed co-fired package, flat terminals, and operates at up to 175°C, making it suitable for flange mount configurations in the high-frequency band.

Median Price

$67.860

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Mouser Electronics

USA . 34 parts In-Stock

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Nova Conductors

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Ampacity Inc.

Singapore . 12 parts In-Stock

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Metaverse IC Inc.

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Perfect Parts

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Overview

Experience superior performance with the 2SC2510A by Toshiba, a high-quality RF Power Bipolar Junction Transistor designed for amplifier applications. Manufactured with precision and expertise by Toshiba, this NPN transistor offers unmatched reliability and efficiency. Ideal for high-frequency bands, the 2SC2510A provides a maximum power dissipation of 250W and a maximum collector current of 20A, ensuring optimal performance in various electronic devices. Upgrade your projects with the 2SC2510A and enjoy top-notch quality and functionality that exceeds expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides excellent thermal conductivity and high reliability, making this transistor suitable for high power applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration with other NPN transistors in circuits, offering flexibility in design and compatibility.

Configuration: SINGLE

The single configuration simplifies circuit design and implementation, reducing complexity and ensuring ease of use.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers high performance and efficiency in amplifying signals.

Surface Mount: YES

Being surface mountable, this transistor is easy to mount on circuit boards, saving space and enabling compact device designs.

Package Shape: ROUND

The round package shape offers uniform stress distribution and easy mounting, enhancing overall reliability and performance.

Maximum Power Dissipation: 250 W

With a high maximum power dissipation of 250 W, this transistor can handle high power levels without overheating, ensuring reliable operation.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides mechanical stability and easy mounting, making it suitable for industrial and high power applications.

Maximum Collector-Emitter Voltage: 35 V

The high maximum collector-emitter voltage of 35 V allows for operation in higher voltage circuits, providing versatility and compatibility.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SC2510A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

600 pF

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SC2510A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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